Improvement of thermal stability of Ni-Germanide with Ni/Co/Ni/TiN structure for high performance ge metal-oxide-semiconductor field effect transistors

Hong Sik Shin, Se Kyung Oh, Min Ho Kang, Hyuk Min Kwon, Jungwoo Oh, Prashant Majhi, Raj Jammy, Ga Won Lee, Hi Deok Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology. It was shown that the Ni/Co/Ni/TiN structure improved the thermal stability of Ni-germanide mainly due to the suppression of Ni diffusion, and/or the retardation of agglomeration. The incorporated Co atoms distributed, mainly in the top region of the Nigermanide and it is believed that this Co-rich Ni-germanide layer in the upper region of Ni-germanide enhanced the thermal stability. Therefore, the proposed Ni/Co/Ni/TiN structure is promising for the formation of a highly thermally immune Ni-germanide for nanoscale Ge MOSFETs technology.

Original languageEnglish
Article number02BA02
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1

Fingerprint

MOSFET devices
metal oxide semiconductors
Thermodynamic stability
thermal stability
field effect transistors
agglomeration
Agglomeration
retarding
Atoms
atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Shin, Hong Sik ; Oh, Se Kyung ; Kang, Min Ho ; Kwon, Hyuk Min ; Oh, Jungwoo ; Majhi, Prashant ; Jammy, Raj ; Lee, Ga Won ; Lee, Hi Deok. / Improvement of thermal stability of Ni-Germanide with Ni/Co/Ni/TiN structure for high performance ge metal-oxide-semiconductor field effect transistors. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 2 PART 2.
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abstract = "In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology. It was shown that the Ni/Co/Ni/TiN structure improved the thermal stability of Ni-germanide mainly due to the suppression of Ni diffusion, and/or the retardation of agglomeration. The incorporated Co atoms distributed, mainly in the top region of the Nigermanide and it is believed that this Co-rich Ni-germanide layer in the upper region of Ni-germanide enhanced the thermal stability. Therefore, the proposed Ni/Co/Ni/TiN structure is promising for the formation of a highly thermally immune Ni-germanide for nanoscale Ge MOSFETs technology.",
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Improvement of thermal stability of Ni-Germanide with Ni/Co/Ni/TiN structure for high performance ge metal-oxide-semiconductor field effect transistors. / Shin, Hong Sik; Oh, Se Kyung; Kang, Min Ho; Kwon, Hyuk Min; Oh, Jungwoo; Majhi, Prashant; Jammy, Raj; Lee, Ga Won; Lee, Hi Deok.

In: Japanese journal of applied physics, Vol. 51, No. 2 PART 2, 02BA02, 01.02.2012.

Research output: Contribution to journalArticle

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T1 - Improvement of thermal stability of Ni-Germanide with Ni/Co/Ni/TiN structure for high performance ge metal-oxide-semiconductor field effect transistors

AU - Shin, Hong Sik

AU - Oh, Se Kyung

AU - Kang, Min Ho

AU - Kwon, Hyuk Min

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Lee, Ga Won

AU - Lee, Hi Deok

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AB - In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology. It was shown that the Ni/Co/Ni/TiN structure improved the thermal stability of Ni-germanide mainly due to the suppression of Ni diffusion, and/or the retardation of agglomeration. The incorporated Co atoms distributed, mainly in the top region of the Nigermanide and it is believed that this Co-rich Ni-germanide layer in the upper region of Ni-germanide enhanced the thermal stability. Therefore, the proposed Ni/Co/Ni/TiN structure is promising for the formation of a highly thermally immune Ni-germanide for nanoscale Ge MOSFETs technology.

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