Improvement of thermal stability of Ni-Germanide with Ni/Co/Ni/TiN structure for high performance ge metal-oxide-semiconductor field effect transistors

Hong Sik Shin, Se Kyung Oh, Min Ho Kang, Hyuk Min Kwon, Jungwoo Oh, Prashant Majhi, Raj Jammy, Ga Won Lee, Hi Deok Lee

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Abstract

In this paper, the thermal stability of Ni-germanide is improved by utilizing Ni/Co/Ni/TiN structure for Ge metal-oxide-semiconductor field effect transistors (MOSFETs) technology. It was shown that the Ni/Co/Ni/TiN structure improved the thermal stability of Ni-germanide mainly due to the suppression of Ni diffusion, and/or the retardation of agglomeration. The incorporated Co atoms distributed, mainly in the top region of the Nigermanide and it is believed that this Co-rich Ni-germanide layer in the upper region of Ni-germanide enhanced the thermal stability. Therefore, the proposed Ni/Co/Ni/TiN structure is promising for the formation of a highly thermally immune Ni-germanide for nanoscale Ge MOSFETs technology.

Original languageEnglish
Article number02BA02
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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