Improvement of thermoelectric properties of Bi 2 Te 3 and Sb 2 Te 3 films grown on graphene substrate

Chang Wan Lee, Gun Hwan Kim, Ji Woon Choi, Ki Seok An, Jin Sang Kim, Hyungjun Kim, Young Kuk Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A study of substrate effect on the thermoelectric (TE) properties of Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO 2 /Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.

Original languageEnglish
Article numbere201700029
JournalPhysica Status Solidi - Rapid Research Letters
Volume11
Issue number6
DOIs
Publication statusPublished - 2017 Jun 1

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Graphite
Graphene
graphene
Substrates
Seebeck coefficient
Carrier mobility
Seebeck effect
carrier mobility
Carrier concentration
Thin films
Lattice mismatch
Plasma enhanced chemical vapor deposition
thin films
vapor deposition
preparation
electrical resistivity
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, Chang Wan ; Kim, Gun Hwan ; Choi, Ji Woon ; An, Ki Seok ; Kim, Jin Sang ; Kim, Hyungjun ; Lee, Young Kuk. / Improvement of thermoelectric properties of Bi 2 Te 3 and Sb 2 Te 3 films grown on graphene substrate In: Physica Status Solidi - Rapid Research Letters. 2017 ; Vol. 11, No. 6.
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abstract = "A study of substrate effect on the thermoelectric (TE) properties of Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO 2 /Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.",
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Improvement of thermoelectric properties of Bi 2 Te 3 and Sb 2 Te 3 films grown on graphene substrate . / Lee, Chang Wan; Kim, Gun Hwan; Choi, Ji Woon; An, Ki Seok; Kim, Jin Sang; Kim, Hyungjun; Lee, Young Kuk.

In: Physica Status Solidi - Rapid Research Letters, Vol. 11, No. 6, e201700029, 01.06.2017.

Research output: Contribution to journalArticle

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T1 - Improvement of thermoelectric properties of Bi 2 Te 3 and Sb 2 Te 3 films grown on graphene substrate

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AU - Kim, Gun Hwan

AU - Choi, Ji Woon

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AU - Kim, Hyungjun

AU - Lee, Young Kuk

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AB - A study of substrate effect on the thermoelectric (TE) properties of Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO 2 /Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.

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