Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate

Chang Wan Lee, Gun Hwan Kim, Ji Woon Choi, Ki Seok An, Jin Sang Kim, Hyungjun Kim, Young Kuk Lee

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13 Citations (Scopus)


A study of substrate effect on the thermoelectric (TE) properties of Bi2Te3 (BT) and Sb2Te3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO2/Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.

Original languageEnglish
Article numbere201700029
JournalPhysica Status Solidi - Rapid Research Letters
Issue number6
Publication statusPublished - 2017 Jun

Bibliographical note

Funding Information:
We would like to acknowledge the financial support from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea. Also, this work was supported by Korea Research Institute of Chemical Technology (SI1603-02, Organometallics and Device Fabrication for IT-ET Convergence Project).

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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