Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems

Hang Kyu Kang, Yu Seon Kang, Min Baik, Kwang Sik Jeong, Dae Kyoung Kim, Jin Dong Song, Mann Ho Cho

Research output: Contribution to journalArticle

Abstract

The thermal stabilities and interfacial properties of HfO2 films created on conditioned i-InP surfaces using atomic layer deposition were investigated. When HfO2 was deposited on sulfur passivation InP substrate, improved interfacial properties and electrical properties were observed by suppressing the interfacial oxides and In or P dangling bonds between HfO2 and InP. X-ray photoelectron spectroscopy (XPS) and thermodynamic data indicated that the acetone-methanol-Isopropanol (AMI) pre-clean process on InP substrate before sulfur treatment helps a sulfur passivation layer on the InP surface form more effective, in comparison to hydrogen fluoride (HF) pre-cleaning. HF pre-cleaning reduces InP native oxides effectively, but In-F bonds are generated on the InP surface, which interrupts the formation of In-S bonds. Moreover, total density of states (TDOS) and electron localization function (ELF) calculation data showed that In-F bonds do not significantly decrease midgap defect states induced by the In dangling bond because fluorine does not chemically bond with In atoms. As a result, the AMI pre-clean process was proposed for effective S passivation on the substrate in the HfO2/InP system. The capacitance-voltage (C-V) data revealed that the hysteresis width and frequency dispersion in the C-V accumulation and depletion were significantly improved in the AMI+S treated sample, as compared with the HF+S treated sample. In addition, the AMI+S treated HfO2/InP showed excellent thermal stability for the interfacial, structural, and electrical properties during post annealing at 600 °C.

Original languageEnglish
Pages (from-to)7226-7235
Number of pages10
JournalJournal of Physical Chemistry C
Volume122
Issue number13
DOIs
Publication statusPublished - 2018 Apr 5

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2-Propanol
Surface states
Hydrofluoric Acid
Acetone
Sulfur
Passivation
passivity
Methanol
Electric properties
sulfur
electrical properties
acetone
hydrofluoric acid
methyl alcohol
Dangling bonds
Substrates
Hydrogen
Oxides
Cleaning
Thermodynamic stability

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kang, Hang Kyu ; Kang, Yu Seon ; Baik, Min ; Jeong, Kwang Sik ; Kim, Dae Kyoung ; Song, Jin Dong ; Cho, Mann Ho. / Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems. In: Journal of Physical Chemistry C. 2018 ; Vol. 122, No. 13. pp. 7226-7235.
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abstract = "The thermal stabilities and interfacial properties of HfO2 films created on conditioned i-InP surfaces using atomic layer deposition were investigated. When HfO2 was deposited on sulfur passivation InP substrate, improved interfacial properties and electrical properties were observed by suppressing the interfacial oxides and In or P dangling bonds between HfO2 and InP. X-ray photoelectron spectroscopy (XPS) and thermodynamic data indicated that the acetone-methanol-Isopropanol (AMI) pre-clean process on InP substrate before sulfur treatment helps a sulfur passivation layer on the InP surface form more effective, in comparison to hydrogen fluoride (HF) pre-cleaning. HF pre-cleaning reduces InP native oxides effectively, but In-F bonds are generated on the InP surface, which interrupts the formation of In-S bonds. Moreover, total density of states (TDOS) and electron localization function (ELF) calculation data showed that In-F bonds do not significantly decrease midgap defect states induced by the In dangling bond because fluorine does not chemically bond with In atoms. As a result, the AMI pre-clean process was proposed for effective S passivation on the substrate in the HfO2/InP system. The capacitance-voltage (C-V) data revealed that the hysteresis width and frequency dispersion in the C-V accumulation and depletion were significantly improved in the AMI+S treated sample, as compared with the HF+S treated sample. In addition, the AMI+S treated HfO2/InP showed excellent thermal stability for the interfacial, structural, and electrical properties during post annealing at 600 °C.",
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Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems. / Kang, Hang Kyu; Kang, Yu Seon; Baik, Min; Jeong, Kwang Sik; Kim, Dae Kyoung; Song, Jin Dong; Cho, Mann Ho.

In: Journal of Physical Chemistry C, Vol. 122, No. 13, 05.04.2018, p. 7226-7235.

Research output: Contribution to journalArticle

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AU - Kang, Hang Kyu

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AU - Jeong, Kwang Sik

AU - Kim, Dae Kyoung

AU - Song, Jin Dong

AU - Cho, Mann Ho

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