Improving memory ECC via defective memory columns

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Due to the emergence of extremely high density memory and growing number of embedded memories, the memory yield became an important issue. In this paper, we proposed methods to exploit replaced defective columns to improve memory ECC. To utilize replaced defective columns, the defect information needs to be stored. In order to store defect information, the proposed method requires a spare column. Experimental results show that the proposed method can significantly improve the memory ECC.

Original languageEnglish
Title of host publicationISOCC 2015 - International SoC Design Conference
Subtitle of host publicationSoC for Internet of Everything (IoE)
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages63-64
Number of pages2
ISBN (Electronic)9781467393089
DOIs
Publication statusPublished - 2016 Feb 8
Event12th International SoC Design Conference, ISOCC 2015 - Gyeongju, Korea, Republic of
Duration: 2015 Nov 22015 Nov 5

Publication series

NameISOCC 2015 - International SoC Design Conference: SoC for Internet of Everything (IoE)

Other

Other12th International SoC Design Conference, ISOCC 2015
CountryKorea, Republic of
CityGyeongju
Period15/11/215/11/5

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Yang, J. S. (2016). Improving memory ECC via defective memory columns. In ISOCC 2015 - International SoC Design Conference: SoC for Internet of Everything (IoE) (pp. 63-64). [7401654] (ISOCC 2015 - International SoC Design Conference: SoC for Internet of Everything (IoE)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2015.7401654