Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer

I. Sak Lee; Bennet Nii Akwei Brown; Dongwoo Kim; Sujin Jung; Byung Ha Kang; Hyun Jae Kim

Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer

I. Sak Lee, Bennet Nii Akwei Brown, Dongwoo Kim, Sujin Jung, Byung Ha Kang, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this research, we suggest indium gallium zinc oxide (IGZO) thin film transistors (TFTs) for detection of visible light using a porous oxide layer (POL) resulting from mechano-chemical treatment. When compared with conventional IGZO TFT, the IGZO TFT with the POL exhibits photoresponsivity of 341.32 A/W, photosensitivity of 1.10Ё10⁶, and detectivity of 4.54Ё10¹⁰ Jones under 532 nm light illumination.

Original language	English
Title of host publication	26th International Display Workshops, IDW 2019
Publisher	International Display Workshops
Pages	447-450
Number of pages	4
ISBN (Electronic)	9781713806301
Publication status	Published - 2019
Event	26th International Display Workshops, IDW 2019 - Sapporo, Japan Duration: 2019 Nov 27 → 2019 Nov 29

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	26th International Display Workshops, IDW 2019
Country/Territory	Japan
City	Sapporo
Period	19/11/27 → 19/11/29

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571).

Publisher Copyright:
© 2019 ITE and SID.

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Lee, I. S., Brown, B. N. A., Kim, D., Jung, S., Kang, B. H., & Kim, H. J. (2019). Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer. In 26th International Display Workshops, IDW 2019 (pp. 447-450). (Proceedings of the International Display Workshops; Vol. 2). International Display Workshops.

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title = "Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer",

abstract = "In this research, we suggest indium gallium zinc oxide (IGZO) thin film transistors (TFTs) for detection of visible light using a porous oxide layer (POL) resulting from mechano-chemical treatment. When compared with conventional IGZO TFT, the IGZO TFT with the POL exhibits photoresponsivity of 341.32 A/W, photosensitivity of 1.10Ё106, and detectivity of 4.54Ё1010 Jones under 532 nm light illumination.",

author = "Lee, {I. Sak} and Brown, {Bennet Nii Akwei} and Dongwoo Kim and Sujin Jung and Kang, {Byung Ha} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571). Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",

year = "2019",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "447--450",

booktitle = "26th International Display Workshops, IDW 2019",

}

Lee, IS, Brown, BNA, Kim, D, Jung, S, Kang, BH & Kim, HJ 2019, Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer. in 26th International Display Workshops, IDW 2019. Proceedings of the International Display Workshops, vol. 2, International Display Workshops, pp. 447-450, 26th International Display Workshops, IDW 2019, Sapporo, Japan, 19/11/27.

Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer. / Lee, I. Sak; Brown, Bennet Nii Akwei; Kim, Dongwoo et al.

26th International Display Workshops, IDW 2019. International Display Workshops, 2019. p. 447-450 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer

AU - Lee, I. Sak

AU - Brown, Bennet Nii Akwei

AU - Kim, Dongwoo

AU - Jung, Sujin

AU - Kang, Byung Ha

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Evaluation Industrial Technology (KEIT) through the Industrial Strategic Technology Development Program (No. 10079571). Publisher Copyright: © 2019 ITE and SID.

PY - 2019

Y1 - 2019

N2 - In this research, we suggest indium gallium zinc oxide (IGZO) thin film transistors (TFTs) for detection of visible light using a porous oxide layer (POL) resulting from mechano-chemical treatment. When compared with conventional IGZO TFT, the IGZO TFT with the POL exhibits photoresponsivity of 341.32 A/W, photosensitivity of 1.10Ё106, and detectivity of 4.54Ё1010 Jones under 532 nm light illumination.

AB - In this research, we suggest indium gallium zinc oxide (IGZO) thin film transistors (TFTs) for detection of visible light using a porous oxide layer (POL) resulting from mechano-chemical treatment. When compared with conventional IGZO TFT, the IGZO TFT with the POL exhibits photoresponsivity of 341.32 A/W, photosensitivity of 1.10Ё106, and detectivity of 4.54Ё1010 Jones under 532 nm light illumination.

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M3 - Conference contribution

AN - SCOPUS:85105276033

T3 - Proceedings of the International Display Workshops

SP - 447

EP - 450

BT - 26th International Display Workshops, IDW 2019

PB - International Display Workshops

T2 - 26th International Display Workshops, IDW 2019

Y2 - 27 November 2019 through 29 November 2019

ER -

Improving performances of oxide phototransistors using a mechano-chemically treated porous structure as the visible light absorption layer

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

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