Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers

D. K. Hwang, Ji Hoon Park, Jiyoul Lee, Jeong M. Choi, Jae Hoon Kim, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

31 Citations (Scopus)


We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and subsequent curing at various temperatures (155, 175, and 200°C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175°C was superior to those of the other PVP films cured at different temperatures. Although the field mobility (∼0.13cm2/Vs) obtained from a TFT with PVP film cured at 200°C appeared higher than that (∼0.07cm2/Vs) from the device with 175°C-cured polymer film, the TFT prepared at 200°C revealed a low on/off current ratio of less than 104 due to its high off-state current and a higher sensitivity to gate bias stress. The unreliable behavior is due to the dielectric charging caused by gate electron injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

Original languageEnglish
Pages (from-to)G23-G26
JournalJournal of the Electrochemical Society
Issue number1
Publication statusPublished - 2006 Apr 10


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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