We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and subsequent curing at various temperatures (155, 175, and 200°C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175°C was superior to those of the other PVP films cured at different temperatures. Although the field mobility (∼0.13cm2/Vs) obtained from a TFT with PVP film cured at 200°C appeared higher than that (∼0.07cm2/Vs) from the device with 175°C-cured polymer film, the TFT prepared at 200°C revealed a low on/off current ratio of less than 104 due to its high off-state current and a higher sensitivity to gate bias stress. The unreliable behavior is due to the dielectric charging caused by gate electron injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2006|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry