Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers

D. K. Hwang, Ji Hoon Park, Jiyoul Lee, Jeong M. Choi, Jae Hoon Kim, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and subsequent curing at various temperatures (155, 175, and 200°C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175°C was superior to those of the other PVP films cured at different temperatures. Although the field mobility (∼0.13cm2/Vs) obtained from a TFT with PVP film cured at 200°C appeared higher than that (∼0.07cm2/Vs) from the device with 175°C-cured polymer film, the TFT prepared at 200°C revealed a low on/off current ratio of less than 104 due to its high off-state current and a higher sensitivity to gate bias stress. The unreliable behavior is due to the dielectric charging caused by gate electron injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

Original languageEnglish
Pages (from-to)G23-G26
JournalJournal of the Electrochemical Society
Volume153
Issue number1
DOIs
Publication statusPublished - 2006 Apr 10

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Thin film transistors
Polymers
Curing
Electron injection
Gate dielectrics
Spin coating
Polymer films
Temperature
poly(4-vinylphenol)
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Hwang, D. K. ; Park, Ji Hoon ; Lee, Jiyoul ; Choi, Jeong M. ; Kim, Jae Hoon ; Kim, Eugene ; Im, Seongil. / Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers. In: Journal of the Electrochemical Society. 2006 ; Vol. 153, No. 1. pp. G23-G26.
@article{9043b328cdae4768a669d0cdf827c3a0,
title = "Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers",
abstract = "We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and subsequent curing at various temperatures (155, 175, and 200°C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175°C was superior to those of the other PVP films cured at different temperatures. Although the field mobility (∼0.13cm2/Vs) obtained from a TFT with PVP film cured at 200°C appeared higher than that (∼0.07cm2/Vs) from the device with 175°C-cured polymer film, the TFT prepared at 200°C revealed a low on/off current ratio of less than 104 due to its high off-state current and a higher sensitivity to gate bias stress. The unreliable behavior is due to the dielectric charging caused by gate electron injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.",
author = "Hwang, {D. K.} and Park, {Ji Hoon} and Jiyoul Lee and Choi, {Jeong M.} and Kim, {Jae Hoon} and Eugene Kim and Seongil Im",
year = "2006",
month = "4",
day = "10",
doi = "10.1149/1.2126585",
language = "English",
volume = "153",
pages = "G23--G26",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers. / Hwang, D. K.; Park, Ji Hoon; Lee, Jiyoul; Choi, Jeong M.; Kim, Jae Hoon; Kim, Eugene; Im, Seongil.

In: Journal of the Electrochemical Society, Vol. 153, No. 1, 10.04.2006, p. G23-G26.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers

AU - Hwang, D. K.

AU - Park, Ji Hoon

AU - Lee, Jiyoul

AU - Choi, Jeong M.

AU - Kim, Jae Hoon

AU - Kim, Eugene

AU - Im, Seongil

PY - 2006/4/10

Y1 - 2006/4/10

N2 - We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and subsequent curing at various temperatures (155, 175, and 200°C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175°C was superior to those of the other PVP films cured at different temperatures. Although the field mobility (∼0.13cm2/Vs) obtained from a TFT with PVP film cured at 200°C appeared higher than that (∼0.07cm2/Vs) from the device with 175°C-cured polymer film, the TFT prepared at 200°C revealed a low on/off current ratio of less than 104 due to its high off-state current and a higher sensitivity to gate bias stress. The unreliable behavior is due to the dielectric charging caused by gate electron injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

AB - We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and subsequent curing at various temperatures (155, 175, and 200°C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175°C was superior to those of the other PVP films cured at different temperatures. Although the field mobility (∼0.13cm2/Vs) obtained from a TFT with PVP film cured at 200°C appeared higher than that (∼0.07cm2/Vs) from the device with 175°C-cured polymer film, the TFT prepared at 200°C revealed a low on/off current ratio of less than 104 due to its high off-state current and a higher sensitivity to gate bias stress. The unreliable behavior is due to the dielectric charging caused by gate electron injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

UR - http://www.scopus.com/inward/record.url?scp=33645505144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645505144&partnerID=8YFLogxK

U2 - 10.1149/1.2126585

DO - 10.1149/1.2126585

M3 - Article

AN - SCOPUS:33645505144

VL - 153

SP - G23-G26

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 1

ER -