Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering

Won Kyung Min; Sung Pyo Park; Tae Soo Jung; Hee Jun Kim; Jin Hyeok Lee; Kyungho Park; Hyun Jae Kim

doi:10.1002/sdtp.13167

Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering

Won Kyung Min, Sung Pyo Park, Tae Soo Jung, Hee Jun Kim, Jin Hyeok Lee, Kyungho Park, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have suggested p-type copper oxide (CuO_x) thin-film transistors (TFTs) with improved switching characteristics by germanium oxide (GeO_x) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeO_x passivated CuO_x TFTs were remarkably improved.

Original language	English
Pages (from-to)	1279-1282
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	50
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.13167
Publication status	Published - 2019
Event	SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States Duration: 2019 May 12 → 2019 May 17

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719).

Publisher Copyright:
© 2019 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.13167

Cite this

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title = "Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering",

abstract = "We have suggested p-type copper oxide (CuOx) thin-film transistors (TFTs) with improved switching characteristics by germanium oxide (GeOx) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeOx passivated CuOx TFTs were remarkably improved.",

author = "Min, {Won Kyung} and Park, {Sung Pyo} and Jung, {Tae Soo} and Kim, {Hee Jun} and Lee, {Jin Hyeok} and Kyungho Park and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719). Publisher Copyright: {\textcopyright} 2019 SID.; SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 ; Conference date: 12-05-2019 Through 17-05-2019",

year = "2019",

doi = "10.1002/sdtp.13167",

language = "English",

volume = "50",

pages = "1279--1282",

journal = "Digest of Technical Papers - SID International Symposium",

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Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering. / Min, Won Kyung; Park, Sung Pyo; Jung, Tae Soo et al.

In: Digest of Technical Papers - SID International Symposium, Vol. 50, No. 1, 2019, p. 1279-1282.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering

AU - Min, Won Kyung

AU - Park, Sung Pyo

AU - Jung, Tae Soo

AU - Kim, Hee Jun

AU - Lee, Jin Hyeok

AU - Park, Kyungho

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719). Publisher Copyright: © 2019 SID.

PY - 2019

Y1 - 2019

N2 - We have suggested p-type copper oxide (CuOx) thin-film transistors (TFTs) with improved switching characteristics by germanium oxide (GeOx) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeOx passivated CuOx TFTs were remarkably improved.

AB - We have suggested p-type copper oxide (CuOx) thin-film transistors (TFTs) with improved switching characteristics by germanium oxide (GeOx) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeOx passivated CuOx TFTs were remarkably improved.

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JO - Digest of Technical Papers - SID International Symposium

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T2 - SID Symposium, Seminar, and Exhibition 2019, Display Week 2019

Y2 - 12 May 2019 through 17 May 2019

ER -

Improving Switching Characteristics of p-type Copper Oxide Thin-film Transistors by Germanium Oxide Passivation through Reactive Sputtering

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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