We have suggested p-type copper oxide (CuOx) thin-film transistors (TFTs) with improved switching characteristics by germanium oxide (GeOx) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeOx passivated CuOx TFTs were remarkably improved.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2019|
|Event||SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States|
Duration: 2019 May 12 → 2019 May 17
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719).
© 2019 SID.
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