Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer

I. Sak Lee; Dongwoo Kim; Su Jin Jung; Byung Ha Kang; Hyun Jae Kim

doi:10.1080/15980316.2019.1708820

Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer

I. Sak Lee, Dongwoo Kim, Su Jin Jung, Byung Ha Kang, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 10⁶ photosensitivity, and 4.54 × 10¹⁰ Jones detectivity under 532 nm light illumination.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Journal of Information Display
Volume	21
Issue number	4
DOIs	https://doi.org/10.1080/15980316.2019.1708820
Publication status	Published - 2020 Dec

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicron in-situ light patterning to minimize the damage on ﬂexible substrates) funded by the Ministry of Trade, Industry, & Energy (MOTIE, South Korea).

Publisher Copyright:
© 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Electrical and Electronic Engineering

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10.1080/15980316.2019.1708820

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title = "Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer",

abstract = "In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.",

author = "Lee, {I. Sak} and Dongwoo Kim and Jung, {Su Jin} and Kang, {Byung Ha} and Kim, {Hyun Jae}",

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AU - Kim, Dongwoo

AU - Jung, Su Jin

AU - Kang, Byung Ha

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicron in-situ light patterning to minimize the damage on ﬂexible substrates) funded by the Ministry of Trade, Industry, & Energy (MOTIE, South Korea). Publisher Copyright: © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.

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N2 - In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.

AB - In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.

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Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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