In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.
|Number of pages||6|
|Journal||Journal of Information Display|
|Publication status||Published - 2020 Dec|
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicron in-situ light patterning to minimize the damage on ﬂexible substrates) funded by the Ministry of Trade, Industry, & Energy (MOTIE, South Korea).
© 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Electrical and Electronic Engineering