In-DRAM cache management for low latency and low power 3D-stacked DRAMs

Ho Hyun Shin, Eui Young Chung

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-high capacity and high-bandwidth memory implementations. However, it also suffers from memory wall problems due to long latency, such as with typical 2D-DRAMs. Although there are various cache management techniques and latency hiding schemes to reduce DRAM access time, in a high-performance system using high-capacity 3D-stacked DRAM, it is ultimately essential to reduce the latency of the DRAM itself. To solve this problem, various asymmetric in-DRAM cache structures have recently been proposed, which are more attractive for high-capacity DRAMs because they can be implemented at a lower cost in 3D-stacked DRAMs. However, most research mainly focuses on the architecture of the in-DRAM cache itself and does not pay much attention to proper management methods. In this paper, we propose two new management algorithms for the in-DRAM caches to achieve a low-latency and low-power 3D-stacked DRAM device. Through the computing system simulation, we demonstrate the improvement of energy delay product up to 67%.

Original languageEnglish
Article number124
JournalMicromachines
Volume10
Issue number2
DOIs
Publication statusPublished - 2019 Feb 14

Bibliographical note

Funding Information:
Funding: This work was funded by the National Research Foundation of Korea (NRF), by the Korea government (MSIP) (grant number 2016R1A2B4011799), by the Ministry of Trade, Industry & Energy (MOTIE) (grant number 10080722) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor device and by Samsung Electronics Company, Ltd., Hwasung, Korea.

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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