In-DRAM cache management for low latency and low power 3D-stacked DRAMs

Ho Hyun Shin, Eui Young Chung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-high capacity and high-bandwidth memory implementations. However, it also suffers from memory wall problems due to long latency, such as with typical 2D-DRAMs. Although there are various cache management techniques and latency hiding schemes to reduce DRAM access time, in a high-performance system using high-capacity 3D-stacked DRAM, it is ultimately essential to reduce the latency of the DRAM itself. To solve this problem, various asymmetric in-DRAM cache structures have recently been proposed, which are more attractive for high-capacity DRAMs because they can be implemented at a lower cost in 3D-stacked DRAMs. However, most research mainly focuses on the architecture of the in-DRAM cache itself and does not pay much attention to proper management methods. In this paper, we propose two new management algorithms for the in-DRAM caches to achieve a low-latency and low-power 3D-stacked DRAM device. Through the computing system simulation, we demonstrate the improvement of energy delay product up to 67%.

Original languageEnglish
Article number124
JournalMicromachines
Volume10
Issue number2
DOIs
Publication statusPublished - 2019 Feb 14

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Cache memory
Dynamic random access storage
Data storage equipment
Computer systems
Bandwidth

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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In-DRAM cache management for low latency and low power 3D-stacked DRAMs. / Shin, Ho Hyun; Chung, Eui Young.

In: Micromachines, Vol. 10, No. 2, 124, 14.02.2019.

Research output: Contribution to journalArticle

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