Abstract
Strain engineering of the magnetic property is an important subject in the study of multiferroic materials. Here we propose a multiferroic bilayer structure in which the magnetic remanence is controlled by the in-plane strain of the top CFO (CoFe2 O4) layer epitaxially constrained by the bottom Pb (Mg1/3 Nb2/3) O3 -PbTiO 3 piezoelectric substrate. We have shown that the room-temperature magnetic remanence (MR) of the 100-nm-thick CFO layer is enhanced by 35.4% when an electric field of 10 kV/cm is applied. The MR value of our bilayer structure was shown to be linearly proportional to the magnitude of the in-plane compressive strain which, in turn, was proportional to the applied field strength. Synchrotron x-ray absorption near-edge structure study supports a scenario of the cation-charge redistribution between Co2+ and Fe 3+ ions under the condition of an electric-field-induced in-plane compressive strain.
| Original language | English |
|---|---|
| Article number | 134401 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 81 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2010 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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In-plane strain control of the magnetic remanence and cation-charge redistribution in CoFe2 O4 thin film grown on a piezoelectric substrate. / Park, Jung H.; Lee, Jung Hoon; Kim, Min G.; Jeong, Young Kyu; Oak, Min Ae; Jang, Hyun Myung; Choi, Hyoung Joon; Scott, James F.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 13, 134401, 01.04.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - In-plane strain control of the magnetic remanence and cation-charge redistribution in CoFe2 O4 thin film grown on a piezoelectric substrate
AU - Park, Jung H.
AU - Lee, Jung Hoon
AU - Kim, Min G.
AU - Jeong, Young Kyu
AU - Oak, Min Ae
AU - Jang, Hyun Myung
AU - Choi, Hyoung Joon
AU - Scott, James F.
PY - 2010/4/1
Y1 - 2010/4/1
N2 - Strain engineering of the magnetic property is an important subject in the study of multiferroic materials. Here we propose a multiferroic bilayer structure in which the magnetic remanence is controlled by the in-plane strain of the top CFO (CoFe2 O4) layer epitaxially constrained by the bottom Pb (Mg1/3 Nb2/3) O3 -PbTiO 3 piezoelectric substrate. We have shown that the room-temperature magnetic remanence (MR) of the 100-nm-thick CFO layer is enhanced by 35.4% when an electric field of 10 kV/cm is applied. The MR value of our bilayer structure was shown to be linearly proportional to the magnitude of the in-plane compressive strain which, in turn, was proportional to the applied field strength. Synchrotron x-ray absorption near-edge structure study supports a scenario of the cation-charge redistribution between Co2+ and Fe 3+ ions under the condition of an electric-field-induced in-plane compressive strain.
AB - Strain engineering of the magnetic property is an important subject in the study of multiferroic materials. Here we propose a multiferroic bilayer structure in which the magnetic remanence is controlled by the in-plane strain of the top CFO (CoFe2 O4) layer epitaxially constrained by the bottom Pb (Mg1/3 Nb2/3) O3 -PbTiO 3 piezoelectric substrate. We have shown that the room-temperature magnetic remanence (MR) of the 100-nm-thick CFO layer is enhanced by 35.4% when an electric field of 10 kV/cm is applied. The MR value of our bilayer structure was shown to be linearly proportional to the magnitude of the in-plane compressive strain which, in turn, was proportional to the applied field strength. Synchrotron x-ray absorption near-edge structure study supports a scenario of the cation-charge redistribution between Co2+ and Fe 3+ ions under the condition of an electric-field-induced in-plane compressive strain.
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U2 - 10.1103/PhysRevB.81.134401
DO - 10.1103/PhysRevB.81.134401
M3 - Article
AN - SCOPUS:77955200230
VL - 81
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 13
M1 - 134401
ER -