In Situ Doping of Black Phosphorus by High-Pressure Synthesis

Nikolas Antonatos, Daniel Bouša, Svyatoslav Shcheka, Seyyed Mohsen Beladi-Mousavi, Martin Pumera, Zdeněk Sofer

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Black phosphorus is a two-dimensional semiconductor with promising properties for catalysis, energy storage, and conversion as well as electronic device applications, and control of its electronic structure is critical for such applications. Substitutional doping of phosphorus by electron donating (e.g., sulfur) or electron accepting elements (e.g., germanium) can significantly change its properties, especially charge carrier concentration. Here, we report the in situ doping of black phosphorus by its direct synthesis from a mixture of red phosphorus and a dopant by high pressure synthesis. In detail, we study the incorporation of germanium, sulfur, selenium, and tellurium within black phosphorus, showing significant differences in incorporation of individual elements and assess their suitability for potential electrochemical applications.

Original languageEnglish
Pages (from-to)10227-10238
Number of pages12
JournalInorganic Chemistry
Volume58
Issue number15
DOIs
Publication statusPublished - 2019 Aug 5

Bibliographical note

Funding Information:
The project was supported by Czech Science Foundation (GACR No. 19-26910X).

Publisher Copyright:
© 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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