In-Situ Formed Type i Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode

Jin Wook Lee, Yung Ji Choi, June Mo Yang, Sujin Ham, Sang Kyu Jeon, Jun Yeob Lee, Young Hyun Song, Eun Kyung Ji, Dae Ho Yoon, Seongrok Seo, Hyunjung Shin, Gil Sang Han, Hyun Suk Jung, Dongho Kim, Nam Gyu Park

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Excellent color purity with a tunable band gap renders organic-inorganic halide perovskite highly capable of performing as light-emitting diodes (LEDs). Perovskite nanocrystals show a photoluminescence quantum yield exceeding 90%, which, however, decreases to lower than 20% upon formation of a thin film. The limited photoluminescence quantum yield of a perovskite thin film has been a formidable obstacle for development of highly efficient perovskite LEDs. Here, we report a method for highly luminescent MAPbBr3 (MA = CH3NH3) nanocrystals formed in situ in a thin film based on nonstoichiometric adduct and solvent-vacuum drying approaches. Excess MABr with respect to PbBr2 in precursor solution plays a critical role in inhibiting crystal growth of MAPbBr3, thereby forming nanocrystals and creating type I band alignment with core MAPbBr3 by embedding MAPbBr3 nanocrystals in the unreacted wider band gap MABr. A solvent-vacuum drying process was developed to preserve nanocrystals in the film, which realizes a fast photoluminescence lifetime of 3.9 ns along with negligible trapping processes. Based on a highly luminescent nanocrystalline MAPbBr3 thin film, a highly efficient green LED with a maximum external quantum efficiency of 8.21% and a current efficiency of 34.46 cd/A was demonstrated.

Original languageEnglish
Pages (from-to)3311-3319
Number of pages9
JournalACS Nano
Volume11
Issue number3
DOIs
Publication statusPublished - 2017 Mar 28

Fingerprint

Perovskite
Nanocrystals
Light emitting diodes
nanocrystals
light emitting diodes
Thin films
Photoluminescence
Quantum yield
thin films
photoluminescence
drying
Drying
Energy gap
Vacuum
vacuum
Crystallization
Quantum efficiency
Crystal growth
embedding
adducts

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, J. W., Choi, Y. J., Yang, J. M., Ham, S., Jeon, S. K., Lee, J. Y., ... Park, N. G. (2017). In-Situ Formed Type i Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode. ACS Nano, 11(3), 3311-3319. https://doi.org/10.1021/acsnano.7b00608
Lee, Jin Wook ; Choi, Yung Ji ; Yang, June Mo ; Ham, Sujin ; Jeon, Sang Kyu ; Lee, Jun Yeob ; Song, Young Hyun ; Ji, Eun Kyung ; Yoon, Dae Ho ; Seo, Seongrok ; Shin, Hyunjung ; Han, Gil Sang ; Jung, Hyun Suk ; Kim, Dongho ; Park, Nam Gyu. / In-Situ Formed Type i Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode. In: ACS Nano. 2017 ; Vol. 11, No. 3. pp. 3311-3319.
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abstract = "Excellent color purity with a tunable band gap renders organic-inorganic halide perovskite highly capable of performing as light-emitting diodes (LEDs). Perovskite nanocrystals show a photoluminescence quantum yield exceeding 90{\%}, which, however, decreases to lower than 20{\%} upon formation of a thin film. The limited photoluminescence quantum yield of a perovskite thin film has been a formidable obstacle for development of highly efficient perovskite LEDs. Here, we report a method for highly luminescent MAPbBr3 (MA = CH3NH3) nanocrystals formed in situ in a thin film based on nonstoichiometric adduct and solvent-vacuum drying approaches. Excess MABr with respect to PbBr2 in precursor solution plays a critical role in inhibiting crystal growth of MAPbBr3, thereby forming nanocrystals and creating type I band alignment with core MAPbBr3 by embedding MAPbBr3 nanocrystals in the unreacted wider band gap MABr. A solvent-vacuum drying process was developed to preserve nanocrystals in the film, which realizes a fast photoluminescence lifetime of 3.9 ns along with negligible trapping processes. Based on a highly luminescent nanocrystalline MAPbBr3 thin film, a highly efficient green LED with a maximum external quantum efficiency of 8.21{\%} and a current efficiency of 34.46 cd/A was demonstrated.",
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Lee, JW, Choi, YJ, Yang, JM, Ham, S, Jeon, SK, Lee, JY, Song, YH, Ji, EK, Yoon, DH, Seo, S, Shin, H, Han, GS, Jung, HS, Kim, D & Park, NG 2017, 'In-Situ Formed Type i Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode', ACS Nano, vol. 11, no. 3, pp. 3311-3319. https://doi.org/10.1021/acsnano.7b00608

In-Situ Formed Type i Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode. / Lee, Jin Wook; Choi, Yung Ji; Yang, June Mo; Ham, Sujin; Jeon, Sang Kyu; Lee, Jun Yeob; Song, Young Hyun; Ji, Eun Kyung; Yoon, Dae Ho; Seo, Seongrok; Shin, Hyunjung; Han, Gil Sang; Jung, Hyun Suk; Kim, Dongho; Park, Nam Gyu.

In: ACS Nano, Vol. 11, No. 3, 28.03.2017, p. 3311-3319.

Research output: Contribution to journalArticle

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AU - Lee, Jin Wook

AU - Choi, Yung Ji

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AU - Ham, Sujin

AU - Jeon, Sang Kyu

AU - Lee, Jun Yeob

AU - Song, Young Hyun

AU - Ji, Eun Kyung

AU - Yoon, Dae Ho

AU - Seo, Seongrok

AU - Shin, Hyunjung

AU - Han, Gil Sang

AU - Jung, Hyun Suk

AU - Kim, Dongho

AU - Park, Nam Gyu

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