In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

Han Byul Kang, Jee Hwan Bae, Kyung Hwan Kwak, Jae Wook Lee, Min Ho Park, Dae Hong Ko, Cheol Woong Yang

Research output: Contribution to journalArticle

Abstract

This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

Original languageEnglish
Pages (from-to)3486-3492
Number of pages7
JournalThin Solid Films
Volume516
Issue number11
DOIs
Publication statusPublished - 2008 Apr 1

Fingerprint

Oxides
Electron beams
Irradiation
electron beams
irradiation
oxides
Twinning
twinning
Crystallization
agglomeration
Crystal lattices
Electron microscopes
Agglomeration
electron microscopes
crystallization
microstructure
Microstructure
germanium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kang, Han Byul ; Bae, Jee Hwan ; Kwak, Kyung Hwan ; Lee, Jae Wook ; Park, Min Ho ; Ko, Dae Hong ; Yang, Cheol Woong. / In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films. In: Thin Solid Films. 2008 ; Vol. 516, No. 11. pp. 3486-3492.
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abstract = "This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.",
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In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films. / Kang, Han Byul; Bae, Jee Hwan; Kwak, Kyung Hwan; Lee, Jae Wook; Park, Min Ho; Ko, Dae Hong; Yang, Cheol Woong.

In: Thin Solid Films, Vol. 516, No. 11, 01.04.2008, p. 3486-3492.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

AU - Kang, Han Byul

AU - Bae, Jee Hwan

AU - Kwak, Kyung Hwan

AU - Lee, Jae Wook

AU - Park, Min Ho

AU - Ko, Dae Hong

AU - Yang, Cheol Woong

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AB - This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

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