In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

Han Byul Kang, Jee Hwan Bae, Kyung Hwan Kwak, Jae Wook Lee, Min Ho Park, Dae Hong Ko, Cheol Woong Yang

Research output: Contribution to journalArticle

Abstract

This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

Original languageEnglish
Pages (from-to)3486-3492
Number of pages7
JournalThin Solid Films
Volume516
Issue number11
DOIs
Publication statusPublished - 2008 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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