In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

Han Byul Kang; Jee Hwan Bae; Kyung Hwan Kwak; Jae Wook Lee; Min Ho Park; Dae Hong Ko; Cheol Woong Yang

doi:10.1016/j.tsf.2007.08.081

In situ observation of electron beam irradiation effects in oxidized polycrystalline Si_1-xGe_x films

Han Byul Kang, Jee Hwan Bae, Kyung Hwan Kwak, Jae Wook Lee, Min Ho Park, Dae Hong Ko, Cheol Woong Yang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study examined the morphological and compositional changes that occur in oxidized poly-Si_1-xGe_x film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO₂ and GeO₂ phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si_0.6Ge_0.4 films, the agglomeration of GeO₂ was observed at the surface region. On the other hand, in the case of the oxidized poly-Si_0.4Ge_0.6 films, the crystallization of GeO₂ occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

Original language	English
Pages (from-to)	3486-3492
Number of pages	7
Journal	Thin Solid Films
Volume	516
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2007.08.081
Publication status	Published - 2008 Apr 1

Bibliographical note

Funding Information:
This work was supported by “System IC 2010” project of Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy, and Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University, and in part by Brain Korea 21 program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2007.08.081

Cite this

@article{8aa8a1a12c984f00948545bf44cd096c,

title = "In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films",

abstract = "This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.",

author = "Kang, {Han Byul} and Bae, {Jee Hwan} and Kwak, {Kyung Hwan} and Lee, {Jae Wook} and Park, {Min Ho} and Ko, {Dae Hong} and Yang, {Cheol Woong}",

note = "Funding Information: This work was supported by “System IC 2010” project of Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy, and Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University, and in part by Brain Korea 21 program.",

year = "2008",

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doi = "10.1016/j.tsf.2007.08.081",

language = "English",

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T1 - In situ observation of electron beam irradiation effects in oxidized polycrystalline Si1-xGex films

AU - Kang, Han Byul

AU - Bae, Jee Hwan

AU - Kwak, Kyung Hwan

AU - Lee, Jae Wook

AU - Park, Min Ho

AU - Ko, Dae Hong

AU - Yang, Cheol Woong

N1 - Funding Information: This work was supported by “System IC 2010” project of Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy, and Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University, and in part by Brain Korea 21 program.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

AB - This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.

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