This study examined the morphological and compositional changes that occur in oxidized poly-Si1-xGex film during electron-beam irradiation in a transmission electron microscope. Before irradiation, the oxide layer was composed of a mixture of SiO2 and GeO2 phases. However, during electron-beam irradiation, there were significant changes in the microstructure and elemental distribution. For the oxidized poly-Si0.6Ge0.4 films, the agglomeration of GeO2 was observed at the surface region. On the other hand, in the case of the oxidized poly-Si0.4Ge0.6 films, the crystallization of GeO2 occurred in the oxide layer. Ge lattice fringes and twinning were also observed in the oxide layer.
|Number of pages||7|
|Journal||Thin Solid Films|
|Publication status||Published - 2008 Apr 1|
Bibliographical noteFunding Information:
This work was supported by “System IC 2010” project of Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy, and Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University, and in part by Brain Korea 21 program.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry