In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process

Dong Hyun Kim, Won Eui Hong, Jae Sang Ro, Seong Hyuk Lee, Chang Hoon Lee, Seungho Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

During the Joule-heating induced crystallization (JIC) process of amorphous silicon for display applications, its phase transformation from amorphous to polycrystalline phases occurs through two different kinetic paths of either solid-to-solid or solid-to-liquid-to-solid phases. Depending on input conditions such as power density and pulsing time, each path results in nano-crystalline silicon phases or large grain structures produced by lateral growth, respectively. In this study, the phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. The temperature field estimated from a simple conduction model confirms the phase-transformation behavior observed experimentally. In addition we could obtain the poly-Si structure produced by solid phase crystallization having the process time of 250 μs and reaching the highest temperature around 1350 K.

Original languageEnglish
Pages (from-to)5516-5522
Number of pages7
JournalThin Solid Films
Volume519
Issue number16
DOIs
Publication statusPublished - 2011 Jun 1

Fingerprint

Joule heating
Crystallization
Amorphous silicon
amorphous silicon
phase transformations
Phase transitions
crystallization
solid phases
in situ measurement
radiant flux density
Nanocrystalline silicon
temperature distribution
Crystal microstructure
reflectance
conduction
Polysilicon
kinetics
electric potential
silicon
liquids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Dong Hyun ; Hong, Won Eui ; Ro, Jae Sang ; Lee, Seong Hyuk ; Lee, Chang Hoon ; Park, Seungho. / In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process. In: Thin Solid Films. 2011 ; Vol. 519, No. 16. pp. 5516-5522.
@article{35bf18333c864ba0bd5e05fb76a71264,
title = "In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process",
abstract = "During the Joule-heating induced crystallization (JIC) process of amorphous silicon for display applications, its phase transformation from amorphous to polycrystalline phases occurs through two different kinetic paths of either solid-to-solid or solid-to-liquid-to-solid phases. Depending on input conditions such as power density and pulsing time, each path results in nano-crystalline silicon phases or large grain structures produced by lateral growth, respectively. In this study, the phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. The temperature field estimated from a simple conduction model confirms the phase-transformation behavior observed experimentally. In addition we could obtain the poly-Si structure produced by solid phase crystallization having the process time of 250 μs and reaching the highest temperature around 1350 K.",
author = "Kim, {Dong Hyun} and Hong, {Won Eui} and Ro, {Jae Sang} and Lee, {Seong Hyuk} and Lee, {Chang Hoon} and Seungho Park",
year = "2011",
month = "6",
day = "1",
doi = "10.1016/j.tsf.2011.03.053",
language = "English",
volume = "519",
pages = "5516--5522",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "16",

}

In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process. / Kim, Dong Hyun; Hong, Won Eui; Ro, Jae Sang; Lee, Seong Hyuk; Lee, Chang Hoon; Park, Seungho.

In: Thin Solid Films, Vol. 519, No. 16, 01.06.2011, p. 5516-5522.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process

AU - Kim, Dong Hyun

AU - Hong, Won Eui

AU - Ro, Jae Sang

AU - Lee, Seong Hyuk

AU - Lee, Chang Hoon

AU - Park, Seungho

PY - 2011/6/1

Y1 - 2011/6/1

N2 - During the Joule-heating induced crystallization (JIC) process of amorphous silicon for display applications, its phase transformation from amorphous to polycrystalline phases occurs through two different kinetic paths of either solid-to-solid or solid-to-liquid-to-solid phases. Depending on input conditions such as power density and pulsing time, each path results in nano-crystalline silicon phases or large grain structures produced by lateral growth, respectively. In this study, the phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. The temperature field estimated from a simple conduction model confirms the phase-transformation behavior observed experimentally. In addition we could obtain the poly-Si structure produced by solid phase crystallization having the process time of 250 μs and reaching the highest temperature around 1350 K.

AB - During the Joule-heating induced crystallization (JIC) process of amorphous silicon for display applications, its phase transformation from amorphous to polycrystalline phases occurs through two different kinetic paths of either solid-to-solid or solid-to-liquid-to-solid phases. Depending on input conditions such as power density and pulsing time, each path results in nano-crystalline silicon phases or large grain structures produced by lateral growth, respectively. In this study, the phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. The temperature field estimated from a simple conduction model confirms the phase-transformation behavior observed experimentally. In addition we could obtain the poly-Si structure produced by solid phase crystallization having the process time of 250 μs and reaching the highest temperature around 1350 K.

UR - http://www.scopus.com/inward/record.url?scp=79958018709&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958018709&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.03.053

DO - 10.1016/j.tsf.2011.03.053

M3 - Article

AN - SCOPUS:79958018709

VL - 519

SP - 5516

EP - 5522

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 16

ER -