In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Heungsoo Park, Daehong Ko, Pushika Apte, C. R. Helms, K. C. Saraswat

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.

Original languageEnglish
Pages (from-to)77-79
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume1
Issue number2
Publication statusPublished - 1998 Aug 1

Fingerprint

Hydrofluoric Acid
hydrofluoric acid
Silicon
Oxides
Gases
Hydrogen
oxides
silicon
gases
Hydrofluoric acid
Hydrochloric Acid
hydrochloric acid
Auger electron spectroscopy
Hydrochloric acid
hydrogen peroxide
spikes
Polysilicon
Hydrogen peroxide
moisture
Hydrogen Peroxide

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Park, Heungsoo ; Ko, Daehong ; Apte, Pushika ; Helms, C. R. ; Saraswat, K. C. / In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas. In: Electrochemical and Solid-State Letters. 1998 ; Vol. 1, No. 2. pp. 77-79.
@article{ec1bf65db63c4464bb7624482a8bc2ef,
title = "In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas",
abstract = "An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.",
author = "Heungsoo Park and Daehong Ko and Pushika Apte and Helms, {C. R.} and Saraswat, {K. C.}",
year = "1998",
month = "8",
day = "1",
language = "English",
volume = "1",
pages = "77--79",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas. / Park, Heungsoo; Ko, Daehong; Apte, Pushika; Helms, C. R.; Saraswat, K. C.

In: Electrochemical and Solid-State Letters, Vol. 1, No. 2, 01.08.1998, p. 77-79.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

AU - Park, Heungsoo

AU - Ko, Daehong

AU - Apte, Pushika

AU - Helms, C. R.

AU - Saraswat, K. C.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.

AB - An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.

UR - http://www.scopus.com/inward/record.url?scp=0032141639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032141639&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032141639

VL - 1

SP - 77

EP - 79

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -