In situ removal of native oxides from silicon surfaces using anhydrous hydrogen fluoride gas

Heungsoo Park, Daehong Ko, Pushika Apte, C. R. Helms, K. C. Saraswat

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Abstract

An in situ, anhydrous hydrogen fluoride (AHF)-based native oxide removal technique is developed, in which the wafer is subjected to AHF at low temperatures for a few minutes and/or followed by a hydrogen spike at high temperature immediately prior to polysilicon deposition. Auger electron spectroscopy analysis shows that this process sequence is able to remove native oxides grown by standard wet cleans such as hydrochloric acid/hydrogen peroxide solution and hydrofluoric acid solution. No moisture is used in this study.

Original languageEnglish
Pages (from-to)77-79
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume1
Issue number2
Publication statusPublished - 1998 Aug 1

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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