In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate

Chi Kyu Choi, Soo Jeong Yang, Jai Yon Ryu, Jeong Yong Lee, Hyung-Ho Park, Oh Joon Kwon, Yong Pak Lee, Kun Ho Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

Original languageEnglish
Pages (from-to)485-487
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number4
DOIs
Publication statusPublished - 1993 Dec 1

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solid phases
misalignment
high energy electrons
ultrahigh vacuum
electron diffraction
transmission electron microscopy
annealing
high resolution
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Choi, C. K., Yang, S. J., Ryu, J. Y., Lee, J. Y., Park, H-H., Kwon, O. J., ... Kim, K. H. (1993). In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. Applied Physics Letters, 63(4), 485-487. https://doi.org/10.1063/1.110007
Choi, Chi Kyu ; Yang, Soo Jeong ; Ryu, Jai Yon ; Lee, Jeong Yong ; Park, Hyung-Ho ; Kwon, Oh Joon ; Lee, Yong Pak ; Kim, Kun Ho. / In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. In: Applied Physics Letters. 1993 ; Vol. 63, No. 4. pp. 485-487.
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abstract = "C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.",
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Choi, CK, Yang, SJ, Ryu, JY, Lee, JY, Park, H-H, Kwon, OJ, Lee, YP & Kim, KH 1993, 'In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate', Applied Physics Letters, vol. 63, no. 4, pp. 485-487. https://doi.org/10.1063/1.110007

In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. / Choi, Chi Kyu; Yang, Soo Jeong; Ryu, Jai Yon; Lee, Jeong Yong; Park, Hyung-Ho; Kwon, Oh Joon; Lee, Yong Pak; Kim, Kun Ho.

In: Applied Physics Letters, Vol. 63, No. 4, 01.12.1993, p. 485-487.

Research output: Contribution to journalArticle

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AU - Choi, Chi Kyu

AU - Yang, Soo Jeong

AU - Ryu, Jai Yon

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AU - Lee, Yong Pak

AU - Kim, Kun Ho

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