In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate

Chi Kyu Choi, Soo Jeong Yang, Jai Yon Ryu, Jeong Yong Lee, Hyung Ho Park, Oh Joon Kwon, Yong Pak Lee, Kun Ho Kim

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Abstract

C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

Original languageEnglish
Pages (from-to)485-487
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number4
DOIs
Publication statusPublished - 1993 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Choi, C. K., Yang, S. J., Ryu, J. Y., Lee, J. Y., Park, H. H., Kwon, O. J., Lee, Y. P., & Kim, K. H. (1993). In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. Applied Physics Letters, 63(4), 485-487. https://doi.org/10.1063/1.110007