In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate

Chi Kyu Choi, Soo Jeong Yang, Jai Yon Ryu, Jeong Yong Lee, Hyung Ho Park, Oh Joon Kwon, Yong Pak Lee, Kun Ho Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

Original languageEnglish
Pages (from-to)485-487
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number4
DOIs
Publication statusPublished - 1993 Dec 1

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solid phases
misalignment
high energy electrons
ultrahigh vacuum
electron diffraction
transmission electron microscopy
annealing
high resolution
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Choi, C. K., Yang, S. J., Ryu, J. Y., Lee, J. Y., Park, H. H., Kwon, O. J., ... Kim, K. H. (1993). In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. Applied Physics Letters, 63(4), 485-487. https://doi.org/10.1063/1.110007
Choi, Chi Kyu ; Yang, Soo Jeong ; Ryu, Jai Yon ; Lee, Jeong Yong ; Park, Hyung Ho ; Kwon, Oh Joon ; Lee, Yong Pak ; Kim, Kun Ho. / In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. In: Applied Physics Letters. 1993 ; Vol. 63, No. 4. pp. 485-487.
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abstract = "C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.",
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Choi, CK, Yang, SJ, Ryu, JY, Lee, JY, Park, HH, Kwon, OJ, Lee, YP & Kim, KH 1993, 'In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate', Applied Physics Letters, vol. 63, no. 4, pp. 485-487. https://doi.org/10.1063/1.110007

In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate. / Choi, Chi Kyu; Yang, Soo Jeong; Ryu, Jai Yon; Lee, Jeong Yong; Park, Hyung Ho; Kwon, Oh Joon; Lee, Yong Pak; Kim, Kun Ho.

In: Applied Physics Letters, Vol. 63, No. 4, 01.12.1993, p. 485-487.

Research output: Contribution to journalArticle

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AU - Choi, Chi Kyu

AU - Yang, Soo Jeong

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AU - Kim, Kun Ho

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