In situ solid phase epitaxial growth of C49-TiSi2 on Si (111)-7×7 substrate

Chi Kyu Choi, Soo Jeong Yang, Jai Yon Ryu, Jeong Yong Lee, Hyung Ho Park, Oh Joon Kwon, Yong Pak Lee, Kun Ho Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

C49-TiSi2 film was grown epitaxially on Si(111) substrate by depositing Ti film on Si(111)- 7×7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si(111)-7×7 sample which was annealed at 650°C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[2̄11]∥Si[011̄], TiSi2 (120)∥Si(111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure.

Original languageEnglish
Pages (from-to)485-487
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number4
DOIs
Publication statusPublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'In situ solid phase epitaxial growth of C49-TiSi<sub>2</sub> on Si (111)-7×7 substrate'. Together they form a unique fingerprint.

Cite this