In-situ synchrotron X-ray scattering study of thin film growth by atomic layer deposition

Yong Jun Park, Dong Ryeol Lee, Hyun Hwi Lee, Han Bo Ram Lee, Hyungjun Kim, Gye Choon Park, Shi Woo Rhee, Sunggi Baik

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report an atomic layer deposition chamber for in-situ synchrotron X-ray scattering study of thin film growth. The chamber was designed for combined synchrotron X-ray reflectivity and twodimensional grazing-incidence X-ray diffraction measurement to do a in-situ monitoring of ALD growth. We demonstrate ruthenium thermal ALD growth for the performance of the chamber. 10, 20, 30, 50, 70, 100, 150 and 250-cycled states are measured by X-ray scattering methods during ALD growth process. Growth rate is calculated from thickness values and the surface roughness of each state is estimated by X-ray reflectivity analysis. The crystal structure of initial growth state is observed by Grazing-incidence X-ray diffraction. These results indicate that in-situ X-ray scattering method is a promising analysis technique to investigate the initial physical morphology of ALD films.

Original languageEnglish
Pages (from-to)1577-1580
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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    Park, Y. J., Lee, D. R., Lee, H. H., Lee, H. B. R., Kim, H., Park, G. C., Rhee, S. W., & Baik, S. (2011). In-situ synchrotron X-ray scattering study of thin film growth by atomic layer deposition. Journal of Nanoscience and Nanotechnology, 11(2), 1577-1580. https://doi.org/10.1166/jnn.2011.3399