We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)