In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec

Tae Woo Kim, Donghyi Koh, Hyukmin Kwon, Chan Soo Shin, Won Kyu Park, Seung Heon Shin, Youngdae Cho, Dae Hong Ko, Richard J.W. Hill, Witek P. Maszara, Paul D. Kirsch, Dae Hyun Kim

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Abstract

We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.

Original languageEnglish
Article number074201
JournalApplied Physics Express
Volume7
Issue number7
DOIs
Publication statusPublished - 2014 Jul

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kim, T. W., Koh, D., Kwon, H., Shin, C. S., Park, W. K., Shin, S. H., Cho, Y., Ko, D. H., Hill, R. J. W., Maszara, W. P., Kirsch, P. D., & Kim, D. H. (2014). In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec. Applied Physics Express, 7(7), [074201]. https://doi.org/10.7567/APEX.7.074201