In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec

Tae Woo Kim, Donghyi Koh, Hyukmin Kwon, Chan Soo Shin, Won Kyu Park, Seung Heon Shin, Youngdae Cho, Dae Hong Ko, Richard J.W. Hill, Witek P. Maszara, Paul D. Kirsch, Dae Hyun Kim

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Abstract

We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.

Original languageEnglish
Article number074201
JournalApplied Physics Express
Volume7
Issue number7
DOIs
Publication statusPublished - 2014 Jul

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Semiconductor quantum wells
field effect transistors
quantum wells

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, T. W., Koh, D., Kwon, H., Shin, C. S., Park, W. K., Shin, S. H., ... Kim, D. H. (2014). In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec. Applied Physics Express, 7(7), [074201]. https://doi.org/10.7567/APEX.7.074201
Kim, Tae Woo ; Koh, Donghyi ; Kwon, Hyukmin ; Shin, Chan Soo ; Park, Won Kyu ; Shin, Seung Heon ; Cho, Youngdae ; Ko, Dae Hong ; Hill, Richard J.W. ; Maszara, Witek P. ; Kirsch, Paul D. ; Kim, Dae Hyun. / In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec. In: Applied Physics Express. 2014 ; Vol. 7, No. 7.
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abstract = "We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.",
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Kim, TW, Koh, D, Kwon, H, Shin, CS, Park, WK, Shin, SH, Cho, Y, Ko, DH, Hill, RJW, Maszara, WP, Kirsch, PD & Kim, DH 2014, 'In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec', Applied Physics Express, vol. 7, no. 7, 074201. https://doi.org/10.7567/APEX.7.074201

In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec. / Kim, Tae Woo; Koh, Donghyi; Kwon, Hyukmin; Shin, Chan Soo; Park, Won Kyu; Shin, Seung Heon; Cho, Youngdae; Ko, Dae Hong; Hill, Richard J.W.; Maszara, Witek P.; Kirsch, Paul D.; Kim, Dae Hyun.

In: Applied Physics Express, Vol. 7, No. 7, 074201, 07.2014.

Research output: Contribution to journalArticle

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T1 - In0.7Ga0.3As quantum well MOSFETs with Al 2O3/HfO2 toward subthreshold swing of ∼60mV/dec

AU - Kim, Tae Woo

AU - Koh, Donghyi

AU - Kwon, Hyukmin

AU - Shin, Chan Soo

AU - Park, Won Kyu

AU - Shin, Seung Heon

AU - Cho, Youngdae

AU - Ko, Dae Hong

AU - Hill, Richard J.W.

AU - Maszara, Witek P.

AU - Kirsch, Paul D.

AU - Kim, Dae Hyun

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AB - We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ∼60mV/decade. The fabricated In 0.7Ga0.3As QW MOSFET with Lg = 5 μm exhibits an excellent subthreshold swing of 69mV/dec and a drain-induced barrier lowering (DIBL) of less than 10mV/V at VDS = 0.5V with EOT ∼0.8 nm. On the basis of measured C-V and I-V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400cm2V -1 s-1 at 300 K.

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