@inproceedings{2a1625da8e964fbfa801f8e182f7da50,
title = "InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax",
abstract = "This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.",
author = "Kim, {T. W.} and Hill, {R. J.W.} and Young, {C. D.} and D. Veksler and L. Morassi and S. Oktybrshky and J. Oh and Kang, {C. Y.} and Kim, {D. H.} and {Del Alamo}, {J. A.} and C. Hobbs and Kirsch, {P. D.} and R. Jammy",
year = "2012",
doi = "10.1109/VLSIT.2012.6242520",
language = "English",
isbn = "9781467308458",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "179--180",
booktitle = "2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers",
note = "2012 Symposium on VLSI Technology, VLSIT 2012 ; Conference date: 12-06-2012 Through 14-06-2012",
}