Abstract
This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
| Original language | English |
|---|---|
| Title of host publication | 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers |
| Pages | 179-180 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2012 Sep 27 |
| Event | 2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States Duration: 2012 Jun 12 → 2012 Jun 14 |
Publication series
| Name | Digest of Technical Papers - Symposium on VLSI Technology |
|---|---|
| ISSN (Print) | 0743-1562 |
Other
| Other | 2012 Symposium on VLSI Technology, VLSIT 2012 |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 12/6/12 → 12/6/14 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax. / Kim, T. W.; Hill, R. J.W.; Young, C. D.; Veksler, D.; Morassi, L.; Oktybrshky, S.; Oh, J.; Kang, C. Y.; Kim, D. H.; Del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.
2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 179-180 6242520 (Digest of Technical Papers - Symposium on VLSI Technology).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax
AU - Kim, T. W.
AU - Hill, R. J.W.
AU - Young, C. D.
AU - Veksler, D.
AU - Morassi, L.
AU - Oktybrshky, S.
AU - Oh, J.
AU - Kang, C. Y.
AU - Kim, D. H.
AU - Del Alamo, J. A.
AU - Hobbs, C.
AU - Kirsch, P. D.
AU - Jammy, R.
PY - 2012/9/27
Y1 - 2012/9/27
N2 - This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
AB - This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
UR - http://www.scopus.com/inward/record.url?scp=84866554333&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866554333&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.2012.6242520
DO - 10.1109/VLSIT.2012.6242520
M3 - Conference contribution
AN - SCOPUS:84866554333
SN - 9781467308458
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 179
EP - 180
BT - 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
ER -