TY - GEN
T1 - InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax
AU - Kim, T. W.
AU - Hill, R. J.W.
AU - Young, C. D.
AU - Veksler, D.
AU - Morassi, L.
AU - Oktybrshky, S.
AU - Oh, J.
AU - Kang, C. Y.
AU - Kim, D. H.
AU - Del Alamo, J. A.
AU - Hobbs, C.
AU - Kirsch, P. D.
AU - Jammy, R.
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
AB - This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
UR - http://www.scopus.com/inward/record.url?scp=84866554333&partnerID=8YFLogxK
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U2 - 10.1109/VLSIT.2012.6242520
DO - 10.1109/VLSIT.2012.6242520
M3 - Conference contribution
AN - SCOPUS:84866554333
SN - 9781467308458
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 179
EP - 180
BT - 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
T2 - 2012 Symposium on VLSI Technology, VLSIT 2012
Y2 - 12 June 2012 through 14 June 2012
ER -