InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax

T. W. Kim; R. J.W. Hill; C. D. Young; D. Veksler; L. Morassi; S. Oktybrshky; J. Oh; C. Y. Kang; D. H. Kim; J. A. Del Alamo; C. Hobbs; P. D. Kirsch; R. Jammy

doi:10.1109/VLSIT.2012.6242520

InAs quantum-well MOSFET (L_g = 100 nm) with record high g _m, f_T and f_max

T. W. Kim, R. J.W. Hill, C. D. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Y. Kang, D. H. Kim, J. A. Del Alamo, C. Hobbs, P. D. Kirsch, R. Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Citations (Scopus)

Abstract

This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (g_m,max = 1.73 mS/μm) and high-frequency performance (f_T = 245 GHz and f_max = 355 GHz) at L _g = 100 nm. This record performance is achieved by using a low D _it composite Al₂O₃/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In_1-xGa_xAs to InAs with similar processing and generalized characterization, including D_it.

Original language	English
Title of host publication	2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages	179-180
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2012.6242520
Publication status	Published - 2012
Event	2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States Duration: 2012 Jun 12 → 2012 Jun 14

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2012 Symposium on VLSI Technology, VLSIT 2012
Country	United States
City	Honolulu, HI
Period	12/6/12 → 12/6/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2012.6242520

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Kim, T. W., Hill, R. J. W., Young, C. D., Veksler, D., Morassi, L., Oktybrshky, S., Oh, J., Kang, C. Y., Kim, D. H., Del Alamo, J. A., Hobbs, C., Kirsch, P. D., & Jammy, R. (2012). InAs quantum-well MOSFET (L_g = 100 nm) with record high g _m, f_T and f_max. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 179-180). [6242520] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242520

Kim, T. W. ; Hill, R. J.W. ; Young, C. D. ; Veksler, D. ; Morassi, L. ; Oktybrshky, S. ; Oh, J. ; Kang, C. Y. ; Kim, D. H. ; Del Alamo, J. A. ; Hobbs, C. ; Kirsch, P. D. ; Jammy, R. / InAs quantum-well MOSFET (L_g = 100 nm) with record high g _m, f_T and f_max. 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. pp. 179-180 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{2a1625da8e964fbfa801f8e182f7da50,

title = "InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax",

abstract = "This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.",

author = "Kim, {T. W.} and Hill, {R. J.W.} and Young, {C. D.} and D. Veksler and L. Morassi and S. Oktybrshky and J. Oh and Kang, {C. Y.} and Kim, {D. H.} and {Del Alamo}, {J. A.} and C. Hobbs and Kirsch, {P. D.} and R. Jammy",

year = "2012",

doi = "10.1109/VLSIT.2012.6242520",

language = "English",

isbn = "9781467308458",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "179--180",

booktitle = "2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers",

}

Kim, TW, Hill, RJW, Young, CD, Veksler, D, Morassi, L, Oktybrshky, S, Oh, J, Kang, CY, Kim, DH, Del Alamo, JA, Hobbs, C, Kirsch, PD & Jammy, R 2012, InAs quantum-well MOSFET (L_g = 100 nm) with record high g _m, f_T and f_max. in 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers., 6242520, Digest of Technical Papers - Symposium on VLSI Technology, pp. 179-180, 2012 Symposium on VLSI Technology, VLSIT 2012, Honolulu, HI, United States, 12/6/12. https://doi.org/10.1109/VLSIT.2012.6242520

InAs quantum-well MOSFET (L_g = 100 nm) with record high g _m, f_T and f_max. / Kim, T. W.; Hill, R. J.W.; Young, C. D.; Veksler, D.; Morassi, L.; Oktybrshky, S.; Oh, J.; Kang, C. Y.; Kim, D. H.; Del Alamo, J. A.; Hobbs, C.; Kirsch, P. D.; Jammy, R.

2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 179-180 6242520 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax

AU - Kim, T. W.

AU - Hill, R. J.W.

AU - Young, C. D.

AU - Veksler, D.

AU - Morassi, L.

AU - Oktybrshky, S.

AU - Oh, J.

AU - Kang, C. Y.

AU - Kim, D. H.

AU - Del Alamo, J. A.

AU - Hobbs, C.

AU - Kirsch, P. D.

AU - Jammy, R.

PY - 2012

Y1 - 2012

N2 - This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.

AB - This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.

UR - http://www.scopus.com/inward/record.url?scp=84866554333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866554333&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2012.6242520

DO - 10.1109/VLSIT.2012.6242520

M3 - Conference contribution

AN - SCOPUS:84866554333

SN - 9781467308458

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 179

EP - 180

BT - 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers

T2 - 2012 Symposium on VLSI Technology, VLSIT 2012

Y2 - 12 June 2012 through 14 June 2012

ER -