InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax

T. W. Kim, R. J.W. Hill, C. D. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Y. Kang, D. H. Kim, J. A. Del Alamo, C. Hobbs, P. D. Kirsch, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Citations (Scopus)


This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at L g = 100 nm. This record performance is achieved by using a low D it composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.

Original languageEnglish
Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Number of pages2
Publication statusPublished - 2012
Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
Duration: 2012 Jun 122012 Jun 14

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562


Other2012 Symposium on VLSI Technology, VLSIT 2012
Country/TerritoryUnited States
CityHonolulu, HI

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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