InAs quantum-well MOSFET (Lg = 100 nm) with record high g m, fT and fmax

T. W. Kim, R. J.W. Hill, C. D. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Y. Kang, D. H. Kim, J. A. Del Alamo, C. Hobbs, P. D. Kirsch, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Citations (Scopus)

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Engineering & Materials Science