Band alignment of Gd 2 O 3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO 2 . The photoelectron binding energy shifts in Gd 2 SiO 5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd 2 SiO 5 /n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd 2 O 3 and Gd 2 SiO 5 , respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd 2 SiO 5 /n-GaAs system.
|Number of pages||4|
|Journal||Applied Surface Science|
|Publication status||Published - 2005 May 15|
|Event||12th International Conference on Solid Films and Surfaces - Hammatsu, Japan|
Duration: 2004 Jun 21 → 2004 Jun 25
Bibliographical noteFunding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375). The experiments at PLS were supported in part by MOST and POSTECH.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films