Incorporation of SiO                         2                          for the band alignment control of Gd                          2                         O                         3                         /n-GaAs(0 0 1) structure

Jun Kyu Yang; Hyung Ho Park

doi:10.1016/j.apsusc.2004.09.164

Incorporation of SiO ₂ for the band alignment control of Gd ₂ O ₃ /n-GaAs(0 0 1) structure

Jun Kyu Yang, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Band alignment of Gd ₂ O ₃ gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO ₂ . The photoelectron binding energy shifts in Gd ₂ SiO ₅ film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd ₂ SiO ₅ /n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd ₂ O ₃ and Gd ₂ SiO ₅ , respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd ₂ SiO ₅ /n-GaAs system.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Applied Surface Science
Volume	244
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.09.164
Publication status	Published - 2005 May 15
Event	12th International Conference on Solid Films and Surfaces - Hammatsu, Japan Duration: 2004 Jun 21 → 2004 Jun 25

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375). The experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2004.09.164

Cite this

Yang, J. K., & Park, H. H. (2005). Incorporation of SiO ₂ for the band alignment control of Gd ₂ O ₃ /n-GaAs(0 0 1) structure Applied Surface Science, 244(1-4), 293-296. https://doi.org/10.1016/j.apsusc.2004.09.164

Yang, Jun Kyu ; Park, Hyung Ho. / Incorporation of SiO ₂ for the band alignment control of Gd ₂ O ₃ /n-GaAs(0 0 1) structure In: Applied Surface Science. 2005 ; Vol. 244, No. 1-4. pp. 293-296.

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title = " Incorporation of SiO 2 for the band alignment control of Gd 2 O 3 /n-GaAs(0 0 1) structure ",

abstract = " Band alignment of Gd 2 O 3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO 2 . The photoelectron binding energy shifts in Gd 2 SiO 5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd 2 SiO 5 /n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd 2 O 3 and Gd 2 SiO 5 , respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd 2 SiO 5 /n-GaAs system.",

author = "Yang, {Jun Kyu} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375). The experiments at PLS were supported in part by MOST and POSTECH. ; 12th International Conference on Solid Films and Surfaces ; Conference date: 21-06-2004 Through 25-06-2004",

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Yang, JK & Park, HH 2005, ' Incorporation of SiO ₂ for the band alignment control of Gd ₂ O ₃ /n-GaAs(0 0 1) structure ', Applied Surface Science, vol. 244, no. 1-4, pp. 293-296. https://doi.org/10.1016/j.apsusc.2004.09.164

Incorporation of SiO ₂ for the band alignment control of Gd ₂ O ₃ /n-GaAs(0 0 1) structure . / Yang, Jun Kyu; Park, Hyung Ho.

In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 293-296.

Research output: Contribution to journal › Conference article › peer-review

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T1 - Incorporation of SiO 2 for the band alignment control of Gd 2 O 3 /n-GaAs(0 0 1) structure

AU - Yang, Jun Kyu

AU - Park, Hyung Ho

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AB - Band alignment of Gd 2 O 3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO 2 . The photoelectron binding energy shifts in Gd 2 SiO 5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd 2 SiO 5 /n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd 2 O 3 and Gd 2 SiO 5 , respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd 2 SiO 5 /n-GaAs system.

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Yang JK, Park HH. Incorporation of SiO ₂ for the band alignment control of Gd ₂ O ₃ /n-GaAs(0 0 1) structure Applied Surface Science. 2005 May 15;244(1-4):293-296. doi: 10.1016/j.apsusc.2004.09.164