Incorporation of SiO2 for the band alignment control of Gd 2O3/n-GaAs(0 0 1) structure

Jun Kyu Yang, Hyung-Ho Park

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Band alignment of Gd2O3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO2. The photoelectron binding energy shifts in Gd2SiO5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd2SiO5/n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd2O3 and Gd 2SiO5, respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd2SiO5/n-GaAs system.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalApplied Surface Science
Volume244
Issue number1-4
DOIs
Publication statusPublished - 2005 May 15
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

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Electronegativity
Photoemission
Photoelectrons
Binding energy
Leakage currents
Band structure
Oxide films
Absorption spectra
Energy gap
Capacitance
Current density
Surface roughness
Crystalline materials
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Incorporation of SiO2 for the band alignment control of Gd 2O3/n-GaAs(0 0 1) structure",
abstract = "Band alignment of Gd2O3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO2. The photoelectron binding energy shifts in Gd2SiO5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd2SiO5/n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd2O3 and Gd 2SiO5, respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd2SiO5/n-GaAs system.",
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Incorporation of SiO2 for the band alignment control of Gd 2O3/n-GaAs(0 0 1) structure. / Yang, Jun Kyu; Park, Hyung-Ho.

In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 293-296.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Incorporation of SiO2 for the band alignment control of Gd 2O3/n-GaAs(0 0 1) structure

AU - Yang, Jun Kyu

AU - Park, Hyung-Ho

PY - 2005/5/15

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N2 - Band alignment of Gd2O3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO2. The photoelectron binding energy shifts in Gd2SiO5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd2SiO5/n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd2O3 and Gd 2SiO5, respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd2SiO5/n-GaAs system.

AB - Band alignment of Gd2O3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO2. The photoelectron binding energy shifts in Gd2SiO5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd2SiO5/n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd2O3 and Gd 2SiO5, respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd2SiO5/n-GaAs system.

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