Band alignment of Gd2O3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO2. The photoelectron binding energy shifts in Gd2SiO5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd2SiO5/n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd2O3 and Gd 2SiO5, respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd2SiO5/n-GaAs system.
|Number of pages||4|
|Journal||Applied Surface Science|
|Publication status||Published - 2005 May 15|
|Event||12th International Conference on Solid Films and Surfaces - Hammatsu, Japan|
Duration: 2004 Jun 21 → 2004 Jun 25
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films