Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Sung Jin Jo, Chang Su Kim, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Youn Sang Kim, Se Jong Lee

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The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

Original languageEnglish
Article number114502
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 2008 Jun 20


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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