Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Sung Jin Jo, Chang Su Kim, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Youn Sang Kim, Se Jong Lee

Research output: Contribution to journalArticle

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Abstract

The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

Original languageEnglish
Article number114502
JournalJournal of Applied Physics
Volume103
Issue number11
DOIs
Publication statusPublished - 2008 Jun 20

Fingerprint

indium
light emitting diodes
indium oxides
tin oxides
sulfonates
polymers
polystyrene
ethylene
hypoxia
Auger spectroscopy
electron spectroscopy
anodes
degradation
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jo, Sung Jin ; Kim, Chang Su ; Kim, Jong Bok ; Ryu, Seung Yoon ; Noh, Joo Hyon ; Baik, Hong Koo ; Kim, Youn Sang ; Lee, Se Jong. / Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 11.
@article{9f2972aebce34ed68c003d10dded5f89,
title = "Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes",
abstract = "The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. {\%} indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. {\%}. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.",
author = "Jo, {Sung Jin} and Kim, {Chang Su} and Kim, {Jong Bok} and Ryu, {Seung Yoon} and Noh, {Joo Hyon} and Baik, {Hong Koo} and Kim, {Youn Sang} and Lee, {Se Jong}",
year = "2008",
month = "6",
day = "20",
doi = "10.1063/1.2939261",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes. / Jo, Sung Jin; Kim, Chang Su; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Kim, Youn Sang; Lee, Se Jong.

In: Journal of Applied Physics, Vol. 103, No. 11, 114502, 20.06.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Kim, Jong Bok

AU - Ryu, Seung Yoon

AU - Noh, Joo Hyon

AU - Baik, Hong Koo

AU - Kim, Youn Sang

AU - Lee, Se Jong

PY - 2008/6/20

Y1 - 2008/6/20

N2 - The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

AB - The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

UR - http://www.scopus.com/inward/record.url?scp=45149130917&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45149130917&partnerID=8YFLogxK

U2 - 10.1063/1.2939261

DO - 10.1063/1.2939261

M3 - Article

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 114502

ER -