Increased thermal stability of Co-silicide using Co-Ta alloy films

Min Joo Kim, Hyo Jick Choi, Dae Hong Ko, Ja Hum Ku, Siyoung Choi, Kazuyuki Fujihara, Ho Kyu Kang, Hoo Jeung Lee

Research output: Contribution to journalArticle

Abstract

The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

Original languageEnglish
Pages (from-to)K651-K656
JournalMaterials Research Society Symposium - Proceedings
Volume670
DOIs
Publication statusPublished - 2001

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Increased thermal stability of Co-silicide using Co-Ta alloy films'. Together they form a unique fingerprint.

  • Cite this

    Kim, M. J., Choi, H. J., Ko, D. H., Ku, J. H., Choi, S., Fujihara, K., Kang, H. K., & Lee, H. J. (2001). Increased thermal stability of Co-silicide using Co-Ta alloy films. Materials Research Society Symposium - Proceedings, 670, K651-K656. https://doi.org/10.1557/proc-670-k6.5