Increased thermal stability of Co-silicide using Co-Ta alloy films

Min Joo Kim, Hyo Jick Choi, Dae Hong Ko, Ja Hum Ku, Siyoung Choi, Kazuyuki Fujihara, Ho Kyu Kang, Hoo Jeung Lee

Research output: Contribution to journalArticle

Abstract

The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

Original languageEnglish
Pages (from-to)K651-K656
JournalMaterials Research Society Symposium - Proceedings
Volume670
Publication statusPublished - 2001 Jan 1

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Thermodynamic stability
thermal stability
Grain boundaries
grain boundaries
Sheet resistance
agglomeration
Reaction rates
furnaces
reaction kinetics
Furnaces
Agglomeration
Annealing
annealing
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, M. J., Choi, H. J., Ko, D. H., Ku, J. H., Choi, S., Fujihara, K., ... Lee, H. J. (2001). Increased thermal stability of Co-silicide using Co-Ta alloy films. Materials Research Society Symposium - Proceedings, 670, K651-K656.
Kim, Min Joo ; Choi, Hyo Jick ; Ko, Dae Hong ; Ku, Ja Hum ; Choi, Siyoung ; Fujihara, Kazuyuki ; Kang, Ho Kyu ; Lee, Hoo Jeung. / Increased thermal stability of Co-silicide using Co-Ta alloy films. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 670. pp. K651-K656.
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abstract = "The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.",
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Kim, MJ, Choi, HJ, Ko, DH, Ku, JH, Choi, S, Fujihara, K, Kang, HK & Lee, HJ 2001, 'Increased thermal stability of Co-silicide using Co-Ta alloy films', Materials Research Society Symposium - Proceedings, vol. 670, pp. K651-K656.

Increased thermal stability of Co-silicide using Co-Ta alloy films. / Kim, Min Joo; Choi, Hyo Jick; Ko, Dae Hong; Ku, Ja Hum; Choi, Siyoung; Fujihara, Kazuyuki; Kang, Ho Kyu; Lee, Hoo Jeung.

In: Materials Research Society Symposium - Proceedings, Vol. 670, 01.01.2001, p. K651-K656.

Research output: Contribution to journalArticle

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AU - Kim, Min Joo

AU - Choi, Hyo Jick

AU - Ko, Dae Hong

AU - Ku, Ja Hum

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AU - Fujihara, Kazuyuki

AU - Kang, Ho Kyu

AU - Lee, Hoo Jeung

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N2 - The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

AB - The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

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