Abstract
The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.
| Original language | English |
|---|---|
| Pages (from-to) | K651-K656 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 670 |
| Publication status | Published - 2001 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Increased thermal stability of Co-silicide using Co-Ta alloy films. / Kim, Min Joo; Choi, Hyo Jick; Ko, Dae Hong; Ku, Ja Hum; Choi, Siyoung; Fujihara, Kazuyuki; Kang, Ho Kyu; Lee, Hoo Jeung.
In: Materials Research Society Symposium - Proceedings, Vol. 670, 01.01.2001, p. K651-K656.Research output: Contribution to journal › Article
TY - JOUR
T1 - Increased thermal stability of Co-silicide using Co-Ta alloy films
AU - Kim, Min Joo
AU - Choi, Hyo Jick
AU - Ko, Dae Hong
AU - Ku, Ja Hum
AU - Choi, Siyoung
AU - Fujihara, Kazuyuki
AU - Kang, Ho Kyu
AU - Lee, Hoo Jeung
PY - 2001/1/1
Y1 - 2001/1/1
N2 - The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.
AB - The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2 phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.
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M3 - Article
VL - 670
SP - K651-K656
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -