Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain

Byung Hyun Kim, Mina Park, Gyubong Kim, Kersti Hermansson, Peter Broqvist, Heon Jin Choi, Kwang Ryeol Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.

Original languageEnglish
Pages (from-to)15297-15303
Number of pages7
JournalJournal of Physical Chemistry C
Volume122
Issue number27
DOIs
Publication statusPublished - 2018 Jul 12

Fingerprint

Nanosheets
Silicon
Electron transitions
Energy gap
silicon
Tensile strain
Conduction bands
Band structure
Density functional theory
Photoluminescence
conduction bands
density functional theory
photoluminescence
Oxidation
oxidation
shift

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Kim, Byung Hyun ; Park, Mina ; Kim, Gyubong ; Hermansson, Kersti ; Broqvist, Peter ; Choi, Heon Jin ; Lee, Kwang Ryeol. / Indirect-to-Direct Band Gap Transition of Si Nanosheets : Effect of Biaxial Strain. In: Journal of Physical Chemistry C. 2018 ; Vol. 122, No. 27. pp. 15297-15303.
@article{319cdedaf33147c08271fb08da0db205,
title = "Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain",
abstract = "The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.",
author = "Kim, {Byung Hyun} and Mina Park and Gyubong Kim and Kersti Hermansson and Peter Broqvist and Choi, {Heon Jin} and Lee, {Kwang Ryeol}",
year = "2018",
month = "7",
day = "12",
doi = "10.1021/acs.jpcc.8b02239",
language = "English",
volume = "122",
pages = "15297--15303",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "27",

}

Kim, BH, Park, M, Kim, G, Hermansson, K, Broqvist, P, Choi, HJ & Lee, KR 2018, 'Indirect-to-Direct Band Gap Transition of Si Nanosheets: Effect of Biaxial Strain', Journal of Physical Chemistry C, vol. 122, no. 27, pp. 15297-15303. https://doi.org/10.1021/acs.jpcc.8b02239

Indirect-to-Direct Band Gap Transition of Si Nanosheets : Effect of Biaxial Strain. / Kim, Byung Hyun; Park, Mina; Kim, Gyubong; Hermansson, Kersti; Broqvist, Peter; Choi, Heon Jin; Lee, Kwang Ryeol.

In: Journal of Physical Chemistry C, Vol. 122, No. 27, 12.07.2018, p. 15297-15303.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Indirect-to-Direct Band Gap Transition of Si Nanosheets

T2 - Effect of Biaxial Strain

AU - Kim, Byung Hyun

AU - Park, Mina

AU - Kim, Gyubong

AU - Hermansson, Kersti

AU - Broqvist, Peter

AU - Choi, Heon Jin

AU - Lee, Kwang Ryeol

PY - 2018/7/12

Y1 - 2018/7/12

N2 - The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.

AB - The effect of biaxial strain on the band structure of two-dimensional silicon nanosheets (Si NSs) with (111), (110), and (001) exposed surfaces was investigated by means of density functional theory calculations. For all the considered Si NSs, an indirect-to-direct band gap transition occurs as the lateral dimensions of Si NSs increase; that is, increasing lateral biaxial strain from compressive to tensile always enhances the direct band gap characteristics. Further analysis revealed the mechanism of the transition which is caused by preferential shifts of the conduction band edge at a specific k-point because of their bond characteristics. Our results explain a photoluminescence result of the (111) Si NSs [U. Kim et al., ACS Nano 2011, 5, 2176-2181] in terms of the plausible tensile strain imposed in the unoxidized inner layer by surface oxidation.

UR - http://www.scopus.com/inward/record.url?scp=85048124636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048124636&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.8b02239

DO - 10.1021/acs.jpcc.8b02239

M3 - Article

AN - SCOPUS:85048124636

VL - 122

SP - 15297

EP - 15303

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 27

ER -