Indirect to direct bandgap transition in methylammonium lead halide perovskite

Tianyi Wang, Benjamin Daiber, Jarvist M. Frost, Sander A. Mann, Erik C. Garnett, Aron Walsh, Bruno Ehrler

Research output: Contribution to journalArticle

102 Citations (Scopus)

Abstract

Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced reduction in local electric field around the Pb atom. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices.

Original languageEnglish
Pages (from-to)509-515
Number of pages7
JournalEnergy and Environmental Science
Volume10
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

Fingerprint

halide
hydrostatic pressure
perovskite
Electron transitions
Perovskite
Energy gap
Lead
iodide
phase transition
recombination
electric field
Hydrostatic pressure
Charge carriers
Semiconductor materials
Carrier lifetime
Iodides
Conduction bands
Optoelectronic devices
semiconductor
methylamine

All Science Journal Classification (ASJC) codes

  • Environmental Chemistry
  • Renewable Energy, Sustainability and the Environment
  • Nuclear Energy and Engineering
  • Pollution

Cite this

Wang, T., Daiber, B., Frost, J. M., Mann, S. A., Garnett, E. C., Walsh, A., & Ehrler, B. (2017). Indirect to direct bandgap transition in methylammonium lead halide perovskite. Energy and Environmental Science, 10(2), 509-515. https://doi.org/10.1039/c6ee03474h
Wang, Tianyi ; Daiber, Benjamin ; Frost, Jarvist M. ; Mann, Sander A. ; Garnett, Erik C. ; Walsh, Aron ; Ehrler, Bruno. / Indirect to direct bandgap transition in methylammonium lead halide perovskite. In: Energy and Environmental Science. 2017 ; Vol. 10, No. 2. pp. 509-515.
@article{b2d67c96a7124dd39407a8152eb5c887,
title = "Indirect to direct bandgap transition in methylammonium lead halide perovskite",
abstract = "Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced reduction in local electric field around the Pb atom. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices.",
author = "Tianyi Wang and Benjamin Daiber and Frost, {Jarvist M.} and Mann, {Sander A.} and Garnett, {Erik C.} and Aron Walsh and Bruno Ehrler",
year = "2017",
month = "2",
day = "1",
doi = "10.1039/c6ee03474h",
language = "English",
volume = "10",
pages = "509--515",
journal = "Energy and Environmental Science",
issn = "1754-5692",
publisher = "Royal Society of Chemistry",
number = "2",

}

Wang, T, Daiber, B, Frost, JM, Mann, SA, Garnett, EC, Walsh, A & Ehrler, B 2017, 'Indirect to direct bandgap transition in methylammonium lead halide perovskite', Energy and Environmental Science, vol. 10, no. 2, pp. 509-515. https://doi.org/10.1039/c6ee03474h

Indirect to direct bandgap transition in methylammonium lead halide perovskite. / Wang, Tianyi; Daiber, Benjamin; Frost, Jarvist M.; Mann, Sander A.; Garnett, Erik C.; Walsh, Aron; Ehrler, Bruno.

In: Energy and Environmental Science, Vol. 10, No. 2, 01.02.2017, p. 509-515.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Indirect to direct bandgap transition in methylammonium lead halide perovskite

AU - Wang, Tianyi

AU - Daiber, Benjamin

AU - Frost, Jarvist M.

AU - Mann, Sander A.

AU - Garnett, Erik C.

AU - Walsh, Aron

AU - Ehrler, Bruno

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced reduction in local electric field around the Pb atom. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices.

AB - Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced reduction in local electric field around the Pb atom. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85014351006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014351006&partnerID=8YFLogxK

U2 - 10.1039/c6ee03474h

DO - 10.1039/c6ee03474h

M3 - Article

VL - 10

SP - 509

EP - 515

JO - Energy and Environmental Science

JF - Energy and Environmental Science

SN - 1754-5692

IS - 2

ER -