Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer

Young Jun Tak; Jusung Chung; Yeong Gyu Kim; Won Gi Kim; Byung Ha Kang; Hyun Jae Kim

doi:10.1002/SDTP.11895

Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer

Young Jun Tak, Jusung Chung, Yeong Gyu Kim, Won Gi Kim, Byung Ha Kang, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Here, we suggest IGZO thin film transistors (TFTs) for detection of visible light region by stacking solution processed defective oxide layer (DOL). DOL was formed at low temperature to intentionally induce higher carbon residues and uncoordinated oxygen species. As a result, IGZO TFTs with DOL showed significantly high detectability under visible light region compared to those without DOL.

Original language	English
Pages (from-to)	1353-1355
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	48
Issue number	1
DOIs	https://doi.org/10.1002/SDTP.11895
Publication status	Published - 2017
Event	SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: 2017 May 21 → 2017 May 26

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© 2017 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/SDTP.11895

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title = "Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer",

abstract = "Here, we suggest IGZO thin film transistors (TFTs) for detection of visible light region by stacking solution processed defective oxide layer (DOL). DOL was formed at low temperature to intentionally induce higher carbon residues and uncoordinated oxygen species. As a result, IGZO TFTs with DOL showed significantly high detectability under visible light region compared to those without DOL.",

author = "Tak, {Young Jun} and Jusung Chung and Kim, {Yeong Gyu} and Kim, {Won Gi} and Kang, {Byung Ha} and Kim, {Hyun Jae}",

note = "Publisher Copyright: {\textcopyright} 2017 SID.; SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 ; Conference date: 21-05-2017 Through 26-05-2017",

year = "2017",

doi = "10.1002/SDTP.11895",

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T1 - Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer

AU - Tak, Young Jun

AU - Chung, Jusung

AU - Kim, Yeong Gyu

AU - Kim, Won Gi

AU - Kang, Byung Ha

AU - Kim, Hyun Jae

PY - 2017

Y1 - 2017

N2 - Here, we suggest IGZO thin film transistors (TFTs) for detection of visible light region by stacking solution processed defective oxide layer (DOL). DOL was formed at low temperature to intentionally induce higher carbon residues and uncoordinated oxygen species. As a result, IGZO TFTs with DOL showed significantly high detectability under visible light region compared to those without DOL.

AB - Here, we suggest IGZO thin film transistors (TFTs) for detection of visible light region by stacking solution processed defective oxide layer (DOL). DOL was formed at low temperature to intentionally induce higher carbon residues and uncoordinated oxygen species. As a result, IGZO TFTs with DOL showed significantly high detectability under visible light region compared to those without DOL.

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U2 - 10.1002/SDTP.11895

DO - 10.1002/SDTP.11895

M3 - Conference article

AN - SCOPUS:85139495263

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EP - 1355

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2017, Display Week 2017

Y2 - 21 May 2017 through 26 May 2017

ER -

Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer

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