Here, we suggest IGZO thin film transistors (TFTs) for detection of visible light region by stacking solution processed defective oxide layer (DOL). DOL was formed at low temperature to intentionally induce higher carbon residues and uncoordinated oxygen species. As a result, IGZO TFTs with DOL showed significantly high detectability under visible light region compared to those without DOL.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2017|
|Event||SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States|
Duration: 2017 May 21 → 2017 May 26
Bibliographical notePublisher Copyright:
© 2017 SID.
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