Indium gallium zinc oxide phototransistor for visible light detection using hydrogen plasma doping

Byung Ha Kang, Won Gi Kim, Jusung Chung, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).

Original languageEnglish
Pages (from-to)1280-1283
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume49
Issue number1
Publication statusPublished - 2018 Jan 1
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 2018 May 202018 May 25

Fingerprint

Phototransistors
Gallium
Zinc oxide
Indium
Doping (additives)
Plasmas
Hydrogen
Photosensitivity
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{896085f3b376468da7d0be04f187c109,
title = "Indium gallium zinc oxide phototransistor for visible light detection using hydrogen plasma doping",
abstract = "We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).",
author = "Kang, {Byung Ha} and Kim, {Won Gi} and Jusung Chung and Lee, {Jin Hyeok} and Kim, {Hyun Jae}",
year = "2018",
month = "1",
day = "1",
language = "English",
volume = "49",
pages = "1280--1283",
journal = "Digest of Technical Papers - SID International Symposium",
issn = "0097-966X",
number = "1",

}

Indium gallium zinc oxide phototransistor for visible light detection using hydrogen plasma doping. / Kang, Byung Ha; Kim, Won Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 49, No. 1, 01.01.2018, p. 1280-1283.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Indium gallium zinc oxide phototransistor for visible light detection using hydrogen plasma doping

AU - Kang, Byung Ha

AU - Kim, Won Gi

AU - Chung, Jusung

AU - Lee, Jin Hyeok

AU - Kim, Hyun Jae

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).

AB - We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).

UR - http://www.scopus.com/inward/record.url?scp=85054015683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054015683&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85054015683

VL - 49

SP - 1280

EP - 1283

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - 1

ER -