We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).
|Title of host publication||Digest of Technical Papers - SID International Symposium|
|Publisher||Blackwell Publishing Ltd.|
|Number of pages||4|
|ISBN (Print)||9781510867659, 9781510867659, 9781510867659|
|Publication status||Published - 2018|
|Event||SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States|
Duration: 2018 May 20 → 2018 May 25
|Name||Digest of Technical Papers - SID International Symposium|
|Other||SID Symposium, Seminar, and Exhibition 2018, Display Week 2018|
|Period||18/5/20 → 18/5/25|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (no. 2017R1A2B3008719).
All Science Journal Classification (ASJC) codes