We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2018 Jan 1|
|Event||SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States|
Duration: 2018 May 20 → 2018 May 25
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