Indium gallium zinc oxide phototransistor for visible light detection using hydrogen plasma doping

Byung Ha Kang, Won Gi Kim, Jusung Chung, Jin Hyeok Lee, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a-IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen-incorporated a-IGZO (a-IGZO:H). The absorption layer could absorb visible light due to increase in sub-gap states via hydrogen plasma doping. As a result, a-IGZO phototransistor with hydrogen doped absorption layer exhibits high photoresponsivity of 678.78 A/W, photosensitivity of 2.98×106, and 5.81×1011 Jones of detectivity under green light (532 nm, 5mW).

Original languageEnglish
Title of host publicationDigest of Technical Papers - SID International Symposium
PublisherBlackwell Publishing Ltd.
Pages1280-1283
Number of pages4
Edition1
ISBN (Print)9781510867659, 9781510867659, 9781510867659
DOIs
Publication statusPublished - 2018
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 2018 May 202018 May 25

Publication series

NameDigest of Technical Papers - SID International Symposium
Number1
Volume49
ISSN (Print)0097-966X
ISSN (Electronic)2168-0159

Other

OtherSID Symposium, Seminar, and Exhibition 2018, Display Week 2018
CountryUnited States
CityLos Angeles
Period18/5/2018/5/25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Kang, B. H., Kim, W. G., Chung, J., Lee, J. H., & Kim, H. J. (2018). Indium gallium zinc oxide phototransistor for visible light detection using hydrogen plasma doping. In Digest of Technical Papers - SID International Symposium (1 ed., pp. 1280-1283). (Digest of Technical Papers - SID International Symposium; Vol. 49, No. 1). Blackwell Publishing Ltd.. https://doi.org/10.1002/sdtp.12448