Indium oxide nanomesh-based electrolyte-gated synaptic transistors

Wei Qin, Byung Ha Kang, Jong Bin An, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Based on the movement and accumulation of ions in the 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, the electrical double layer (EDL) was formed between a nanomesh channel and the [EMIM]DCA electrolyte to contribute to the increase in the conductance of the channel. The basic functions of artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), and long-term plasticity (LTP), are realized successfully. Besides, the high-pass filter function was implemented, which shows the application potential of the device in signal processing.

Original languageEnglish
Pages (from-to)179-185
Number of pages7
JournalJournal of Information Display
Issue number3
Publication statusPublished - 2021

Bibliographical note

Funding Information:
This work was supported by the Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT of Korea under Grant #2018M3A7B4071521.

Publisher Copyright:
© 2021 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering


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