Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.
Bibliographical noteFunding Information:
Manuscript received February 9, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. The review of this letter was arranged by Editor A. Nathan. P. D. Rack acknowledges support from the National Science Foundation CBET Award 0729250.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering