Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

Joo Hyon Noh; Seung Yoon Ryu; Sung Jin Jo; Chang Su Kim; Sung Woo Sohn; Philip D. Rack; Dong Joo Kim; Hong Koo Baik

doi:10.1109/LED.2010.2046133

Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

Joo Hyon Noh, Seung Yoon Ryu, Sung Jin Jo, Chang Su Kim, Sung Woo Sohn, Philip D. Rack, Dong Joo Kim, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) were fabricated using an indium oxide (In ₂O₃ thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In ₂O₃ TFTs had a field-effect mobility of 15.3 cm ²ċV^-1ċs^-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 10⁸, a subthreshold gate voltage swing of 0.25 V̇ decade^-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In₂O₃ is a promising candidate for high-performance TFTs for transparent and flexible electronics.

Original language	English
Article number	5451159
Pages (from-to)	567-569
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2046133
Publication status	Published - 2010 Jun

Bibliographical note

Funding Information:
Manuscript received February 9, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. The review of this letter was arranged by Editor A. Nathan. P. D. Rack acknowledges support from the National Science Foundation CBET Award 0729250.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{cd94b246f0cf47ac99b75eb2f9eac84c,

title = "Indium oxide thin-film transistors fabricated by RF sputtering at room temperature",

abstract = "Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 {\.V} decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.",

author = "Noh, {Joo Hyon} and Ryu, {Seung Yoon} and Jo, {Sung Jin} and Kim, {Chang Su} and Sohn, {Sung Woo} and Rack, {Philip D.} and Kim, {Dong Joo} and Baik, {Hong Koo}",

note = "Funding Information: Manuscript received February 9, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. The review of this letter was arranged by Editor A. Nathan. P. D. Rack acknowledges support from the National Science Foundation CBET Award 0729250.",

year = "2010",

month = jun,

doi = "10.1109/LED.2010.2046133",

language = "English",

volume = "31",

pages = "567--569",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

AU - Noh, Joo Hyon

AU - Ryu, Seung Yoon

AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Sohn, Sung Woo

AU - Rack, Philip D.

AU - Kim, Dong Joo

AU - Baik, Hong Koo

N1 - Funding Information: Manuscript received February 9, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. The review of this letter was arranged by Editor A. Nathan. P. D. Rack acknowledges support from the National Science Foundation CBET Award 0729250.

PY - 2010/6

Y1 - 2010/6

N2 - Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.

AB - Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=77953024683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953024683&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2046133

DO - 10.1109/LED.2010.2046133

M3 - Article

AN - SCOPUS:77953024683

VL - 31

SP - 567

EP - 569

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

M1 - 5451159

ER -