Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

Joo Hyon Noh, Seung Yoon Ryu, Sung Jin Jo, Chang Su Kim, Sung Woo Sohn, Philip D. Rack, Dong Joo Kim, Hong Koo Baik

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Abstract

Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.

Original languageEnglish
Article number5451159
Pages (from-to)567-569
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number6
DOIs
Publication statusPublished - 2010 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Noh, J. H., Ryu, S. Y., Jo, S. J., Kim, C. S., Sohn, S. W., Rack, P. D., Kim, D. J., & Baik, H. K. (2010). Indium oxide thin-film transistors fabricated by RF sputtering at room temperature. IEEE Electron Device Letters, 31(6), 567-569. [5451159]. https://doi.org/10.1109/LED.2010.2046133