Abstract
Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.
| Original language | English |
|---|---|
| Article number | 5451159 |
| Pages (from-to) | 567-569 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 31 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2010 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Indium oxide thin-film transistors fabricated by RF sputtering at room temperature. / Noh, Joo Hyon; Ryu, Seung Yoon; Jo, Sung Jin; Kim, Chang Su; Sohn, Sung Woo; Rack, Philip D.; Kim, Dong Joo; Baik, Hong Koo.
In: IEEE Electron Device Letters, Vol. 31, No. 6, 5451159, 01.06.2010, p. 567-569.Research output: Contribution to journal › Article
TY - JOUR
T1 - Indium oxide thin-film transistors fabricated by RF sputtering at room temperature
AU - Noh, Joo Hyon
AU - Ryu, Seung Yoon
AU - Jo, Sung Jin
AU - Kim, Chang Su
AU - Sohn, Sung Woo
AU - Rack, Philip D.
AU - Kim, Dong Joo
AU - Baik, Hong Koo
PY - 2010/6/1
Y1 - 2010/6/1
N2 - Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.
AB - Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.
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U2 - 10.1109/LED.2010.2046133
DO - 10.1109/LED.2010.2046133
M3 - Article
AN - SCOPUS:77953024683
VL - 31
SP - 567
EP - 569
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 6
M1 - 5451159
ER -