Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh, S. Y. Ryu, C. S. Kim, S. J. Jo, H. S. Hwang, H. K. Baik

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

Original languageEnglish
Pages1999-2000
Number of pages2
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

Cite this

Noh, J. H., Ryu, S. Y., Kim, C. S., Jo, S. J., Hwang, H. S., & Baik, H. K. (2007). Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. 1999-2000. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.