Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh, S. Y. Ryu, C. S. Kim, S. J. Jo, H. S. Hwang, Hong Koo Baik

Research output: Contribution to conference › Paper

1 Citation (Scopus)

Abstract

We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

Original languageEnglish
Pages1999-2000
Number of pages2
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 5 → 2007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/5 → 07/12/5

Fingerprint

Thin film transistors
indium oxides
Magnetron sputtering
Indium
Oxide films
magnetron sputtering
transistors
Equipment and Supplies
Temperature
room temperature
thin films
indium oxide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

Cite this

Noh, J. H., Ryu, S. Y., Kim, C. S., Jo, S. J., Hwang, H. S., & Baik, H. K. (2007). Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. 1999-2000. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.
Noh, J. H. ; Ryu, S. Y. ; Kim, C. S. ; Jo, S. J. ; Hwang, H. S. ; Baik, Hong Koo. / Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.2 p.
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Noh, JH, Ryu, SY, Kim, CS, Jo, SJ, Hwang, HS & Baik, HK 2007, 'Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering' Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan, 07/12/5 - 07/12/5, pp. 1999-2000.

Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. / Noh, J. H.; Ryu, S. Y.; Kim, C. S.; Jo, S. J.; Hwang, H. S.; Baik, Hong Koo.

2007. 1999-2000 Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

AU - Noh, J. H.

AU - Ryu, S. Y.

AU - Kim, C. S.

AU - Jo, S. J.

AU - Hwang, H. S.

AU - Baik, Hong Koo

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

AB - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

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Noh JH, Ryu SY, Kim CS, Jo SJ, Hwang HS, Baik HK. Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. 2007. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.

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