Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh; S. Y. Ryu; C. S. Kim; S. J. Jo; H. S. Hwang; H. K. Baik

Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

J. H. Noh, S. Y. Ryu, C. S. Kim, S. J. Jo, H. S. Hwang, H. K. Baik

Department of Materials Science and Engineering

Research output: Contribution to conference › Paper

2 Citations (Scopus)

Abstract

We have fabricated a bottom-gate In₂O₃ TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm²V¹s^-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In₂O₃ TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

Original language	English
Pages	1999-2000
Number of pages	2
Publication status	Published - 2007 Dec 1
Event	14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5

Other

Other	14th International Display Workshops, IDW '07
Country	Japan
City	Sapporo
Period	07/12/5 → 07/12/5

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Atomic and Molecular Physics, and Optics

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Noh, J. H., Ryu, S. Y., Kim, C. S., Jo, S. J., Hwang, H. S., & Baik, H. K. (2007). Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. 1999-2000. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.

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title = "Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering",

abstract = "We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.",

author = "Noh, {J. H.} and Ryu, {S. Y.} and Kim, {C. S.} and Jo, {S. J.} and Hwang, {H. S.} and Baik, {H. K.}",

year = "2007",

month = dec,

day = "1",

language = "English",

pages = "1999--2000",

note = "14th International Display Workshops, IDW '07 ; Conference date: 05-12-2007 Through 05-12-2007",

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T1 - Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering

AU - Noh, J. H.

AU - Ryu, S. Y.

AU - Kim, C. S.

AU - Jo, S. J.

AU - Hwang, H. S.

AU - Baik, H. K.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

AB - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.

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M3 - Paper

AN - SCOPUS:43349101013

SP - 1999

EP - 2000

T2 - 14th International Display Workshops, IDW '07

Y2 - 5 December 2007 through 5 December 2007

ER -