Abstract
We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.
Original language | English |
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Pages | 1999-2000 |
Number of pages | 2 |
Publication status | Published - 2007 Dec 1 |
Event | 14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 2007 Dec 5 → 2007 Dec 5 |
Other
Other | 14th International Display Workshops, IDW '07 |
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Country | Japan |
City | Sapporo |
Period | 07/12/5 → 07/12/5 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Atomic and Molecular Physics, and Optics
Cite this
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Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering. / Noh, J. H.; Ryu, S. Y.; Kim, C. S.; Jo, S. J.; Hwang, H. S.; Baik, Hong Koo.
2007. 1999-2000 Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.Research output: Contribution to conference › Paper
TY - CONF
T1 - Indium oxide thin-film transistors fabricated by room temperature rf-magnetron sputtering
AU - Noh, J. H.
AU - Ryu, S. Y.
AU - Kim, C. S.
AU - Jo, S. J.
AU - Hwang, H. S.
AU - Baik, Hong Koo
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.
AB - We have fabricated a bottom-gate In2O3 TFT with high mobility using rf magnetron sputtering at room temperature. Device shows an average field effect mobility of 12.3 Cm2V1s-1, and sharp on-fo-off transition with about 7 orders of magnitude. Adopting our bottom-gate In2O3 TFT, a load-resistance inverter was set up and good dynamic operation has been demonstrated.
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UR - http://www.scopus.com/inward/citedby.url?scp=43349101013&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:43349101013
SP - 1999
EP - 2000
ER -