Abstract
This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.
| Original language | English |
|---|---|
| Pages (from-to) | 602051-602053 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 49 |
| Issue number | 6 PART 1 |
| DOIs | |
| Publication status | Published - 2010 Jun |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Sim, B., Hwang, H., Ryu, S., Baik, H., & Lee, M. (2010). Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode. Japanese journal of applied physics, 49(6 PART 1), 602051-602053. https://doi.org/10.1143/JJAP.49.060205