Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

Boyeon Sim; Hyeonseok Hwang; Seungyoon Ryu; Hongkoo Baik; Myeongkyu Lee

doi:10.1143/JJAP.49.060205

Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

Boyeon Sim, Hyeonseok Hwang, Seungyoon Ryu, Hongkoo Baik, Myeongkyu Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m² with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.

Original language	English
Pages (from-to)	602051-602053
Number of pages	3
Journal	Japanese journal of applied physics
Volume	49
Issue number	6 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.060205
Publication status	Published - 2010 Jun 1

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Sim, B., Hwang, H., Ryu, S., Baik, H., & Lee, M. (2010). Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode. Japanese journal of applied physics, 49(6 PART 1), 602051-602053. https://doi.org/10.1143/JJAP.49.060205

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Access to Document

10.1143/JJAP.49.060205