Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

Boyeon Sim, Hyeonseok Hwang, Seungyoon Ryu, Hongkoo Baik, Myeongkyu Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)


This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.

Original languageEnglish
Pages (from-to)602051-602053
Number of pages3
JournalJapanese journal of applied physics
Issue number6 PART 1
Publication statusPublished - 2010 Jun 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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