Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

Boyeon Sim, Hyeonseok Hwang, Seungyoon Ryu, Hong Koo Baik, Myeongkyu Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.

Original languageEnglish
Pages (from-to)602051-602053
Number of pages3
JournalJapanese Journal of Applied Physics
Volume49
Issue number6 PART 1
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

Organic light emitting diodes (OLED)
Buffer layers
Tin oxides
indium oxides
Indium
tin oxides
light emitting diodes
buffers
Electrodes
electrodes
Substrates
luminance
Oxide films
Light emitting diodes
oxide films
Luminance
interlayers
transmittance
Anodes
anodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75{\%}. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.",
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Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode. / Sim, Boyeon; Hwang, Hyeonseok; Ryu, Seungyoon; Baik, Hong Koo; Lee, Myeongkyu.

In: Japanese Journal of Applied Physics, Vol. 49, No. 6 PART 1, 01.06.2010, p. 602051-602053.

Research output: Contribution to journalArticle

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