Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

Y. R. Park, Jong-Hyun Ahn, J. S. Kim, B. S. Kwon, N. E. Lee, H. Y. Kang, C. K. Hwangbo, Jinho Ahn, Hwan Seok Seo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl 2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl 2 /Ar plasma even with a very high overetch time.

Original languageEnglish
Pages (from-to)761-765
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number4
DOIs
Publication statusPublished - 2010 Jul 1

Fingerprint

Extreme ultraviolet lithography
Plasma etching
Inductively coupled plasma
plasma etching
Tin oxides
indium oxides
Indium
tin oxides
Masks
masks
lithography
Multilayers
Fabrication
absorbers
Photolithography
Bias voltage
Lithography
Flow of gases
fabrication
Etching

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Park, Y. R. ; Ahn, Jong-Hyun ; Kim, J. S. ; Kwon, B. S. ; Lee, N. E. ; Kang, H. Y. ; Hwangbo, C. K. ; Ahn, Jinho ; Seo, Hwan Seok. / Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2010 ; Vol. 28, No. 4. pp. 761-765.
@article{0c3993095f524947a91911b13bcb281d,
title = "Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography",
abstract = "Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl 2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl 2 /Ar plasma even with a very high overetch time.",
author = "Park, {Y. R.} and Jong-Hyun Ahn and Kim, {J. S.} and Kwon, {B. S.} and Lee, {N. E.} and Kang, {H. Y.} and Hwangbo, {C. K.} and Jinho Ahn and Seo, {Hwan Seok}",
year = "2010",
month = "7",
day = "1",
doi = "10.1116/1.3425639",
language = "English",
volume = "28",
pages = "761--765",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography. / Park, Y. R.; Ahn, Jong-Hyun; Kim, J. S.; Kwon, B. S.; Lee, N. E.; Kang, H. Y.; Hwangbo, C. K.; Ahn, Jinho; Seo, Hwan Seok.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 28, No. 4, 01.07.2010, p. 761-765.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

AU - Park, Y. R.

AU - Ahn, Jong-Hyun

AU - Kim, J. S.

AU - Kwon, B. S.

AU - Lee, N. E.

AU - Kang, H. Y.

AU - Hwangbo, C. K.

AU - Ahn, Jinho

AU - Seo, Hwan Seok

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl 2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl 2 /Ar plasma even with a very high overetch time.

AB - Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl 2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl 2 /Ar plasma even with a very high overetch time.

UR - http://www.scopus.com/inward/record.url?scp=77954207854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954207854&partnerID=8YFLogxK

U2 - 10.1116/1.3425639

DO - 10.1116/1.3425639

M3 - Article

VL - 28

SP - 761

EP - 765

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

ER -