Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

Y. R. Park; J. H. Ahn; J. S. Kim; B. S. Kwon; N. E. Lee; H. Y. Kang; C. K. Hwangbo; Jinho Ahn; Hwan Seok Seo

doi:10.1116/1.3425639

Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

Y. R. Park, J. H. Ahn, J. S. Kim, B. S. Kwon, N. E. Lee, H. Y. Kang, C. K. Hwangbo, Jinho Ahn, Hwan Seok Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl₂ /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl₂ /Ar plasma even with a very high overetch time.

Original language	English
Pages (from-to)	761-765
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	28
Issue number	4
DOIs	https://doi.org/10.1116/1.3425639
Publication status	Published - 2010 Jul

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Park, Y. R., Ahn, J. H., Kim, J. S., Kwon, B. S., Lee, N. E., Kang, H. Y., Hwangbo, C. K., Ahn, J., & Seo, H. S. (2010). Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 28(4), 761-765. https://doi.org/10.1116/1.3425639

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title = "Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography",

abstract = "Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl2 /Ar plasma even with a very high overetch time.",

author = "Park, {Y. R.} and Ahn, {J. H.} and Kim, {J. S.} and Kwon, {B. S.} and Lee, {N. E.} and Kang, {H. Y.} and Hwangbo, {C. K.} and Jinho Ahn and Seo, {Hwan Seok}",

year = "2010",

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doi = "10.1116/1.3425639",

language = "English",

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Park, YR, Ahn, JH, Kim, JS, Kwon, BS, Lee, NE, Kang, HY, Hwangbo, CK, Ahn, J & Seo, HS 2010, 'Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 28, no. 4, pp. 761-765. https://doi.org/10.1116/1.3425639

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AU - Park, Y. R.

AU - Ahn, J. H.

AU - Kim, J. S.

AU - Kwon, B. S.

AU - Lee, N. E.

AU - Kang, H. Y.

AU - Hwangbo, C. K.

AU - Ahn, Jinho

AU - Seo, Hwan Seok

PY - 2010/7

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N2 - Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl2 /Ar plasma even with a very high overetch time.

AB - Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl2 /Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl2 /Ar plasma even with a very high overetch time.

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Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

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