The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 °C, 300 °C, and 350 °C, respectively. The air-Annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm2/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-Annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-Annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wet-Annealing, reducing their electron trap states and leading to more charge carriers.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning through the Korean Government under Grant 2011- 0028819.
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering