Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions

Bo Sung Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effect of annealing on solution-processed indium oxide (In2O3) films was investigated under ambient air and wet conditions at 250 °C, 300 °C, and 350 °C, respectively. The air-Annealed films exhibited excellent thin-film transistor characteristics including field-effect mobility of 0.11-3.53 cm2/Vs and subthreshold slope of 0.28-0.36 V/dec. Whereas the wet-Annealed films showed a conductor-like behavior due to >100 times higher carrier concentration than the air-Annealed films. The results of X-ray photoelectron spectroscopy supported the decrease of hydroxyl groups in the In2O3 films by wet-Annealing, reducing their electron trap states and leading to more charge carriers.

Original languageEnglish
Article number7548124
Pages (from-to)3558-3561
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume63
Issue number9
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

Thin film transistors
Indium
Oxide films
Annealing
Air
Electron traps
Charge carriers
Hydroxyl Radical
Carrier concentration
X ray photoelectron spectroscopy
indium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors under Ambient Air and Wet Conditions. / Kim, Bo Sung; Kim, Hyun Jae.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 9, 7548124, 01.09.2016, p. 3558-3561.

Research output: Contribution to journalArticle

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