Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates

Chil Hyoung Lee, Young Jei Oh, Deuk Yong Lee, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

(Ba0.5Sr0.5)TiO3 (BST) thin films were deposited on various substrates, such as LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire, by using RF magnetron sputtering to investigate the influence of annealing temperature on the dielectric properties and the tunability of the films. The BST thin films deposited on LaAlO3(100) exhibited a high tunability of 42 % and a low dielectric loss of 0.004 due to the small differences in the lattice parameters and the thermal expansion coefficients between the BST films and the substrates. In contrast, the BST films deposited on a polycrystalline sapphire, exhibiting a relatively high mismatch factor, showed the tunability of ~24 % and a dielectric loss of ~0.007. The BST thin films on LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire were annealed. The optimized annealing temperatures were found to be 950 °C, 1050 °C, 1100 °C, and 1150 °C, respectively. The difference in annealing temperature is likely due to the differences in the lattice parameters and the thermal expansion coefficients between the films and the substrates.

Original languageEnglish
Pages (from-to)1571-1574
Number of pages4
JournalJournal of the Korean Physical Society
Volume69
Issue number10
DOIs
Publication statusPublished - 2016 Nov 1

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dielectric properties
sapphire
annealing
thin films
dielectric loss
thermal expansion
lattice parameters
temperature
coefficients
magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates",
abstract = "(Ba0.5Sr0.5)TiO3 (BST) thin films were deposited on various substrates, such as LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire, by using RF magnetron sputtering to investigate the influence of annealing temperature on the dielectric properties and the tunability of the films. The BST thin films deposited on LaAlO3(100) exhibited a high tunability of 42 {\%} and a low dielectric loss of 0.004 due to the small differences in the lattice parameters and the thermal expansion coefficients between the BST films and the substrates. In contrast, the BST films deposited on a polycrystalline sapphire, exhibiting a relatively high mismatch factor, showed the tunability of ~24 {\%} and a dielectric loss of ~0.007. The BST thin films on LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire were annealed. The optimized annealing temperatures were found to be 950 °C, 1050 °C, 1100 °C, and 1150 °C, respectively. The difference in annealing temperature is likely due to the differences in the lattice parameters and the thermal expansion coefficients between the films and the substrates.",
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Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates. / Lee, Chil Hyoung; Oh, Young Jei; Lee, Deuk Yong; Choi, Doo Jin.

In: Journal of the Korean Physical Society, Vol. 69, No. 10, 01.11.2016, p. 1571-1574.

Research output: Contribution to journalArticle

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