Semiconductor nanowires (NWs) have a broad range of applications for nano-and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.
Bibliographical noteFunding Information:
Funding: This research was funded by the Helmholtz Associations Initiative Networking Fund (Grant No. HRSF-0002) and the Russian Science Foundation (Grant No. 18–41-06001); Sergey Lazarev was funded by the Competitiveness Enhancement Program Grant of Tomsk Polytechnic University and the Governmental program “Science,” project no. FSWW-2020-0014.
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Process Chemistry and Technology
- Computer Science Applications
- Fluid Flow and Transfer Processes