Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung Min Yu; Myungjin Shin; Min Hyeong Kim; Lars Zimmermann; Woo Young Choi

doi:10.3788/COL201715.071301

Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung Min Yu, Myungjin Shin, Min Hyeong Kim, Lars Zimmermann, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

Original language	English
Article number	071301
Journal	Chinese Optics Letters
Volume	15
Issue number	7
DOIs	https://doi.org/10.3788/COL201715.071301
Publication status	Published - 2017 Jul 10

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science, ICT and Future Planning (No. 2015R1A2A2A01007772) and the Materials and Parts Technology R&D Program funded by the Korean Ministry of Trade, Industry & Energy (Project No. 10065666).

Publisher Copyright:
© 2017 Chinese Optics Letters.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.3788/COL201715.071301

Cite this

@article{5fbca22b04a84e989d544e8e1d53e2ee,

title = "Influence of dynamic power dissipation on Si MRM modulation characteristics",

abstract = "We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.",

author = "Yu, {Byung Min} and Myungjin Shin and Kim, {Min Hyeong} and Lars Zimmermann and Choi, {Woo Young}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science, ICT and Future Planning (No. 2015R1A2A2A01007772) and the Materials and Parts Technology R&D Program funded by the Korean Ministry of Trade, Industry & Energy (Project No. 10065666). Publisher Copyright: {\textcopyright} 2017 Chinese Optics Letters.",

year = "2017",

month = jul,

day = "10",

doi = "10.3788/COL201715.071301",

language = "English",

volume = "15",

journal = "Chinese Optics Letters",

issn = "1671-7694",

publisher = "Science Press",

number = "7",

}

TY - JOUR

T1 - Influence of dynamic power dissipation on Si MRM modulation characteristics

AU - Yu, Byung Min

AU - Shin, Myungjin

AU - Kim, Min Hyeong

AU - Zimmermann, Lars

AU - Choi, Woo Young

N1 - Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science, ICT and Future Planning (No. 2015R1A2A2A01007772) and the Materials and Parts Technology R&D Program funded by the Korean Ministry of Trade, Industry & Energy (Project No. 10065666). Publisher Copyright: © 2017 Chinese Optics Letters.

PY - 2017/7/10

Y1 - 2017/7/10

N2 - We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

AB - We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

UR - http://www.scopus.com/inward/record.url?scp=85028708966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028708966&partnerID=8YFLogxK

U2 - 10.3788/COL201715.071301

DO - 10.3788/COL201715.071301

M3 - Article

AN - SCOPUS:85028708966

SN - 1671-7694

VL - 15

JO - Chinese Optics Letters

JF - Chinese Optics Letters

IS - 7

M1 - 071301

ER -

Influence of dynamic power dissipation on Si MRM modulation characteristics

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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