Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung Min Yu, Myungjin Shin, Min Hyeong Kim, Lars Zimmermann, Woo Young Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

Original languageEnglish
Article number071301
JournalChinese Optics Letters
Volume15
Issue number7
DOIs
Publication statusPublished - 2017 Jul 10

Fingerprint

Modulators
modulators
Energy dissipation
dissipation
Modulation
modulation
rings
Wavelength
shift
Electric potential
electric potential
wavelengths
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Yu, Byung Min ; Shin, Myungjin ; Kim, Min Hyeong ; Zimmermann, Lars ; Choi, Woo Young. / Influence of dynamic power dissipation on Si MRM modulation characteristics. In: Chinese Optics Letters. 2017 ; Vol. 15, No. 7.
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Influence of dynamic power dissipation on Si MRM modulation characteristics. / Yu, Byung Min; Shin, Myungjin; Kim, Min Hyeong; Zimmermann, Lars; Choi, Woo Young.

In: Chinese Optics Letters, Vol. 15, No. 7, 071301, 10.07.2017.

Research output: Contribution to journalArticle

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