Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung Min Yu, Myungjin Shin, Min Hyeong Kim, Lars Zimmermann, Woo Young Choi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We experimentally observe that Si micro-ring modulator (MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

Original languageEnglish
Article number071301
JournalChinese Optics Letters
Volume15
Issue number7
DOIs
Publication statusPublished - 2017 Jul 10

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science, ICT and Future Planning (No. 2015R1A2A2A01007772) and the Materials and Parts Technology R&D Program funded by the Korean Ministry of Trade, Industry & Energy (Project No. 10065666).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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