Influence of emitter width on the performance of 975-nm (In,Ga)(As,P)/(Al,Ga)as high-power laser diodes

Jung Tack Yang, Younghyun Kim, Marzieh Pournoury, Jae Bong Lee, Dong Soo Bang, Tae Kyung Kim, Woo Young Choi

Research output: Contribution to journalArticle


The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation’s accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and 90 µm. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

Original languageEnglish
Pages (from-to)445-450
Number of pages6
JournalCurrent Optics and Photonics
Issue number5
Publication statusPublished - 2019 Jan 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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