Influence of Ge addition on phase formation and electromagnetic properties in internal tin processed Nb3Sn wires

D. W. Ha, S. S. Oh, H. S. Ha, N. J. Lee, R. K. Ko, Y. K. Kwon, K. S. Ryu, H. K. Baik

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In order to investigate the effect of Ge addition to the Cu matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb3Sn strands with pure Cu and Cu - 0.2, 0.4, 0.6 wt% Ge alloys were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb3Sn wires that were heat treated at temperatures ranging from 680°C for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb3Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb3Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 680°C to 740°C.

Original languageEnglish
Pages (from-to)3565-3568
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume11
Issue number1 III
DOIs
Publication statusPublished - 2001 Mar 1
Event2000 Applied Superconductivity Conference - Virginia Beach, VA, United States
Duration: 2000 Sep 172000 Sep 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Influence of Ge addition on phase formation and electromagnetic properties in internal tin processed Nb<sub>3</sub>Sn wires'. Together they form a unique fingerprint.

  • Cite this