Influence of grain size and room-temperature sputtering condition on optical and electrical properties of undoped and Ga-doped ZnO thin films

Do Hyun Kim, Hoonha Jeon, Jae Young Leem, Minhyon Jeon, Ved Prakash Verma, Wonbong Choi, Seong Hui Lee, Joo Ho Moon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The optical and the electrical properties of undoped zinc-oxide (ZnO) thin films of various thicknesses were compared with those of Ga-doped (GZO) thin films. Transparent, high-quality undoped ZnO and GZO films were deposited successfully using radio-frequency (RF) sputtering at room temperature. The films were polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. The films had an average optical transmission >85 % in the visible part of the electromagnetic spectrum. The undoped ZnO thin films were more transparent than the GZO thin films. The ZnO thin-film transistors (TFTs) were operated in the enhancement mode with a threshold voltage of 2.5 V. In contrary, the Ga-doped ZnO TFTs were operated in a depletion mode with a threshold voltage of-3.4 V. We successfully demonstrated undoped and the Ga-doped ZnO TFTs by using conventional SiO2 gate insulators at room temperature. We postulate that undoped ZnO films, which have not been treated to improve the optical properties, can be used, instead of doped ZnO films, in transparent devices for next generation optoelectronic devices.

Original languageEnglish
Pages (from-to)1987-1992
Number of pages6
JournalJournal of the Korean Physical Society
Volume51
Issue number6
DOIs
Publication statusPublished - 2007 Jan 1

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zinc oxides
grain size
sputtering
electrical properties
optical properties
room temperature
thin films
transistors
threshold voltage
oxide films
electromagnetic spectra
axioms
optoelectronic devices
radio frequencies
depletion
insulators
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Do Hyun ; Jeon, Hoonha ; Leem, Jae Young ; Jeon, Minhyon ; Verma, Ved Prakash ; Choi, Wonbong ; Lee, Seong Hui ; Moon, Joo Ho. / Influence of grain size and room-temperature sputtering condition on optical and electrical properties of undoped and Ga-doped ZnO thin films. In: Journal of the Korean Physical Society. 2007 ; Vol. 51, No. 6. pp. 1987-1992.
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Influence of grain size and room-temperature sputtering condition on optical and electrical properties of undoped and Ga-doped ZnO thin films. / Kim, Do Hyun; Jeon, Hoonha; Leem, Jae Young; Jeon, Minhyon; Verma, Ved Prakash; Choi, Wonbong; Lee, Seong Hui; Moon, Joo Ho.

In: Journal of the Korean Physical Society, Vol. 51, No. 6, 01.01.2007, p. 1987-1992.

Research output: Contribution to journalArticle

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N2 - The optical and the electrical properties of undoped zinc-oxide (ZnO) thin films of various thicknesses were compared with those of Ga-doped (GZO) thin films. Transparent, high-quality undoped ZnO and GZO films were deposited successfully using radio-frequency (RF) sputtering at room temperature. The films were polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. The films had an average optical transmission >85 % in the visible part of the electromagnetic spectrum. The undoped ZnO thin films were more transparent than the GZO thin films. The ZnO thin-film transistors (TFTs) were operated in the enhancement mode with a threshold voltage of 2.5 V. In contrary, the Ga-doped ZnO TFTs were operated in a depletion mode with a threshold voltage of-3.4 V. We successfully demonstrated undoped and the Ga-doped ZnO TFTs by using conventional SiO2 gate insulators at room temperature. We postulate that undoped ZnO films, which have not been treated to improve the optical properties, can be used, instead of doped ZnO films, in transparent devices for next generation optoelectronic devices.

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