Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs

Jongbum Nah, Seung Han Park, Kwang Moo Kim, Young Ju Park, Chan Kyeong Hyon, Eun Kyu Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.

Original languageEnglish
Pages (from-to)132-135
Number of pages4
JournalJournal of the Korean Physical Society
Volume39
Issue number1
Publication statusPublished - 2001 Jul 1

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quantum dots
optical properties
statistical distributions
examination
microscopes
photoluminescence
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Nah, Jongbum ; Park, Seung Han ; Kim, Kwang Moo ; Park, Young Ju ; Hyon, Chan Kyeong ; Kim, Eun Kyu. / Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs. In: Journal of the Korean Physical Society. 2001 ; Vol. 39, No. 1. pp. 132-135.
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Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs. / Nah, Jongbum; Park, Seung Han; Kim, Kwang Moo; Park, Young Ju; Hyon, Chan Kyeong; Kim, Eun Kyu.

In: Journal of the Korean Physical Society, Vol. 39, No. 1, 01.07.2001, p. 132-135.

Research output: Contribution to journalArticle

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