The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2001 Jul|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)