Abstract
The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.
| Original language | English |
|---|---|
| Pages (from-to) | 132-135 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 39 |
| Issue number | 1 |
| Publication status | Published - 2001 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs. / Nah, Jongbum; Park, Seung Han; Kim, Kwang Moo; Park, Young Ju; Hyon, Chan Kyeong; Kim, Eun Kyu.
In: Journal of the Korean Physical Society, Vol. 39, No. 1, 01.07.2001, p. 132-135.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs
AU - Nah, Jongbum
AU - Park, Seung Han
AU - Kim, Kwang Moo
AU - Park, Young Ju
AU - Hyon, Chan Kyeong
AU - Kim, Eun Kyu
PY - 2001/7/1
Y1 - 2001/7/1
N2 - The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.
AB - The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.
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M3 - Article
AN - SCOPUS:0035636653
VL - 39
SP - 132
EP - 135
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 1
ER -