Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs

Jongbum Nah; Seung Han Park; Kwang Moo Kim; Young Ju Park; Chan Kyeong Hyon; Eun Kyu Kim

Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs

Jongbum Nah, Seung Han Park, Kwang Moo Kim, Young Ju Park, Chan Kyeong Hyon, Eun Kyu Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The influence of growth conditions, such as As₄ beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As₄ beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.

Original language	English
Pages (from-to)	132-135
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	1
Publication status	Published - 2001 Jul

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

@article{947906a3098d4cb8baa36888cef44a85,

title = "Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs",

abstract = "The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.",

author = "Jongbum Nah and Park, {Seung Han} and Kim, {Kwang Moo} and Park, {Young Ju} and Hyon, {Chan Kyeong} and Kim, {Eun Kyu}",

year = "2001",

month = jul,

language = "English",

volume = "39",

pages = "132--135",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs. / Nah, Jongbum; Park, Seung Han; Kim, Kwang Moo; Park, Young Ju; Hyon, Chan Kyeong; Kim, Eun Kyu.

In: Journal of the Korean Physical Society, Vol. 39, No. 1, 07.2001, p. 132-135.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs

AU - Nah, Jongbum

AU - Park, Seung Han

AU - Kim, Kwang Moo

AU - Park, Young Ju

AU - Hyon, Chan Kyeong

AU - Kim, Eun Kyu

PY - 2001/7

Y1 - 2001/7

N2 - The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.

AB - The influence of growth conditions, such as As4 beam pressure and growth temperature, on the formation of self-assembled InAs quantum dots (QDs) on (001) GaAs was investigated. The results of a systematic examination of the surface morphology and the optical properties of the QDs are presented. As the substrate temperature was increased, the size of the QDs increased. Increasing the As4 beam pressure increased the lateral size of the QDs whereas it decreased the height and the density of the QDs. The photoluminescence behavior was shown to vary significantly with the growth conditions and to correlate well with the statistical distribution of QDs, as verified by atomic force microscope.

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VL - 39

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EP - 135

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1

ER -

Influence of Growth Conditions on the Formation and the Optical Properties of Self-Assembled InAs Quantum Dots on (001)GaAs

Abstract

All Science Journal Classification (ASJC) codes

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