Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids

Seung Jin Heo, Seokhyun Yoon, Sang Hoon Oh, Doo Hyun Yoon, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the effects of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot (CQD) solids. We applied high pressure to PbS CQD solids using nitrogen gas to reduce the inter-dot distance. Using this simple process, we obtained conductive PbS CQD solids. Terahertz time-domain spectroscopy was used to study charge carrier transport as a function of pressure. We found that the minimum pressure needed to increase the dielectric constant, conductivity, and carrier mobility was 4 MPa. All properties dramatically improved at 5 MPa; for example, the mobility increased from 0.13 cm2 V-1 s-1 at 0.1 MPa to 0.91 cm2 V-1 s-1 at 5 MPa. We propose this simple process as a nondestructive approach for making conductive PbS CQD solids that are free of chemical and physical defects.

Original languageEnglish
Pages (from-to)903-907
Number of pages5
JournalNanoscale
Volume6
Issue number2
DOIs
Publication statusPublished - 2014 Jan 21

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Carrier transport
Charge carriers
Semiconductor quantum dots
Carrier mobility
Permittivity
Nitrogen
Gases
Spectroscopy
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Heo, Seung Jin ; Yoon, Seokhyun ; Oh, Sang Hoon ; Yoon, Doo Hyun ; Kim, Hyun Jae. / Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids. In: Nanoscale. 2014 ; Vol. 6, No. 2. pp. 903-907.
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Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids. / Heo, Seung Jin; Yoon, Seokhyun; Oh, Sang Hoon; Yoon, Doo Hyun; Kim, Hyun Jae.

In: Nanoscale, Vol. 6, No. 2, 21.01.2014, p. 903-907.

Research output: Contribution to journalArticle

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