Influence of hydrogen incorporation on the reliability of gate oxide formed by using low-temperature plasma selective oxidation applicable to sub-50-nm W-polymetal gate devices

Kwan Yong Lim, Min Gyu Sung, Heung Jae Cho, Yong Soo Kim, Se Aug Jang, Seung Ryong Lee, Kwangok Kim, Hong Seon Yang, Hyun Chul Sohn, Seung Ho Pyi, Ja Chun Ku, Jin Woong Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

This letter reveals the physical and electrical properties of silicon dioxide (SiO2 formed by the plasma selective oxidation (plasma selox) using O2 and H2 gas mixture, which is applicable to sub-50-nm tungsten-polymetal gate memory devices without capping nitride film. Metal-oxide-semiconductor capacitors with gate oxide formed by the plasma selox at the process temperature in the range of 400 °C-700 °C showed much better time-dependent dielectric-breakdown characteristics than those formed by the conventional thermal selox at 850 °C. On the other hand, in the case of very low temperature (25 °C) plasma selox, the gate oxide degradation such as initial breakdown was found. It turned out to be due to the excessive hydrogen and water incorporation into the SiO2 layer through thermal desorption spectroscopy measurements.

Original languageEnglish
Pages (from-to)338-340
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number4
DOIs
Publication statusPublished - 2008 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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