This letter reveals the physical and electrical properties of silicon dioxide (SiO2 formed by the plasma selective oxidation (plasma selox) using O2 and H2 gas mixture, which is applicable to sub-50-nm tungsten-polymetal gate memory devices without capping nitride film. Metal-oxide-semiconductor capacitors with gate oxide formed by the plasma selox at the process temperature in the range of 400 °C-700 °C showed much better time-dependent dielectric-breakdown characteristics than those formed by the conventional thermal selox at 850 °C. On the other hand, in the case of very low temperature (25 °C) plasma selox, the gate oxide degradation such as initial breakdown was found. It turned out to be due to the excessive hydrogen and water incorporation into the SiO2 layer through thermal desorption spectroscopy measurements.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering