Influence of hydrogen incorporation on the reliability of gate oxide formed by using low-temperature plasma selective oxidation applicable to sub-50-nm W-polymetal gate devices

Kwan Yong Lim, Min Gyu Sung, Heung Jae Cho, Yong Soo Kim, Se Aug Jang, Seung Ryong Lee, Kwangok Kim, Hong Seon Yang, Hyun Chul Sohn, Seung Ho Pyi, Ja Chun Ku, Jin Woong Kim

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Engineering & Materials Science

Chemical Compounds