Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Jang Yeon Kwon, Bonwon Koo, Sangyoon Lee

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

Original languageEnglish
Article number5438732
Pages (from-to)440-442
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number5
DOIs
Publication statusPublished - 2010 May 1

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Thin film transistors
Oxides
Oxide films
Lighting
Threshold voltage
Deterioration
Degradation
Electrodes
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Park, Joon Seok ; Kim, Tae Sang ; Son, Kyoung Seok ; Jung, Ji Sim ; Lee, Kwang Hee ; Kwon, Jang Yeon ; Koo, Bonwon ; Lee, Sangyoon. / Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 5. pp. 440-442.
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Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors. / Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Jung, Ji Sim; Lee, Kwang Hee; Kwon, Jang Yeon; Koo, Bonwon; Lee, Sangyoon.

In: IEEE Electron Device Letters, Vol. 31, No. 5, 5438732, 01.05.2010, p. 440-442.

Research output: Contribution to journalArticle

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AB - The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

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