The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering