Influence of illumination on the negative-bias stability of transparent hafniumindiumzinc oxide thin-film transistors

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Jang Yeon Kwon, Bonwon Koo, Sangyoon Lee

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The stability of transparent hafniumindiumzinc oxide (HIZO) thin-film transistors (TFTs) was investigated under negative-bias stress conditions. TFTs that incorporate transparent electrode materials such as indiumtin oxide or indiumzinc oxide were studied, and the bias stress experiments showed that transparent TFTs undergo severe degradation (negative shift in threshold voltage VT) with simultaneous exposure to white light, in comparison with the results obtained in dark. The time evolution of VT indicates that the deterioration under illumination occurs mainly by the trapping of photogenerated carriers near the HIZO/dielectric interface.

Original languageEnglish
Article number5438732
Pages (from-to)440-442
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2010 May 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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