TY - GEN
T1 - Influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2,Ti0.8)O3 thin films in the self-regulation window
AU - Lee, Keun
AU - Lee, Hyun Ju
AU - Kim, Gun Hwan
AU - Hwang, Cheol Seong
PY - 2007
Y1 - 2007
N2 - The influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2Ti 0.8)O3 (PZT) thin films on the self-regulation process window [constant Pb concentration in the film irrespective of the precursor input ratio (Pb/(Zr+Ti)] was investigated. The effect of the various process parameteres, such as the pretreatment of Ir electrode, susceptor and chamber wall cleaning, and total precursor flow rate on the self-regulation window was investigated. Prevention of iridium oxide formation by Ar pre-treatment was crucial to improve ferroelectric performances of PZT films within the self-regulation process window.
AB - The influence of in-situ surface treatment of Ir electrode before metal-organic chemical vapor deposition of Pb(Zr0.2Ti 0.8)O3 (PZT) thin films on the self-regulation process window [constant Pb concentration in the film irrespective of the precursor input ratio (Pb/(Zr+Ti)] was investigated. The effect of the various process parameteres, such as the pretreatment of Ir electrode, susceptor and chamber wall cleaning, and total precursor flow rate on the self-regulation window was investigated. Prevention of iridium oxide formation by Ar pre-treatment was crucial to improve ferroelectric performances of PZT films within the self-regulation process window.
UR - http://www.scopus.com/inward/record.url?scp=51349165453&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51349165453&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2007.4393204
DO - 10.1109/ISAF.2007.4393204
M3 - Conference contribution
AN - SCOPUS:51349165453
SN - 1424413338
SN - 9781424413331
T3 - IEEE International Symposium on Applications of Ferroelectrics
SP - 172
EP - 175
BT - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
T2 - 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Y2 - 27 May 2007 through 31 May 2007
ER -