Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE

Soo Kyung Chang, C. D. Lee, S. I. Min, E. D. Sim, Y. S. Joh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

Original languageEnglish
Pages (from-to)112-116
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Metallorganic vapor phase epitaxy
vapor phase epitaxy
Excitons
Semiconductor quantum wells
Atomic layer epitaxy
quantum wells
Quantum confinement
Electron transitions
Atmospheric pressure
Photoluminescence
excitons
energy
square wells
atomic layer epitaxy
atmospheric pressure
photoluminescence
LDS 751
shift

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Chang, Soo Kyung ; Lee, C. D. ; Min, S. I. ; Sim, E. D. ; Joh, Y. S. / Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE. In: Journal of Crystal Growth. 1996 ; Vol. 159, No. 1-4. pp. 112-116.
@article{d88489478fc54f6cab77236b64dddbcf,
title = "Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE",
abstract = "The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.",
author = "Chang, {Soo Kyung} and Lee, {C. D.} and Min, {S. I.} and Sim, {E. D.} and Joh, {Y. S.}",
year = "1996",
month = "1",
day = "1",
doi = "10.1016/0022-0248(95)00831-4",
language = "English",
volume = "159",
pages = "112--116",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE. / Chang, Soo Kyung; Lee, C. D.; Min, S. I.; Sim, E. D.; Joh, Y. S.

In: Journal of Crystal Growth, Vol. 159, No. 1-4, 01.01.1996, p. 112-116.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE

AU - Chang, Soo Kyung

AU - Lee, C. D.

AU - Min, S. I.

AU - Sim, E. D.

AU - Joh, Y. S.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

AB - The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

UR - http://www.scopus.com/inward/record.url?scp=0030562205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030562205&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(95)00831-4

DO - 10.1016/0022-0248(95)00831-4

M3 - Article

VL - 159

SP - 112

EP - 116

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -