Abstract
The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 112-116 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 159 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1996 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE. / Chang, Soo Kyung; Lee, C. D.; Min, S. I.; Sim, E. D.; Joh, Y. S.
In: Journal of Crystal Growth, Vol. 159, No. 1-4, 01.01.1996, p. 112-116.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE
AU - Chang, Soo Kyung
AU - Lee, C. D.
AU - Min, S. I.
AU - Sim, E. D.
AU - Joh, Y. S.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.
AB - The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.
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U2 - 10.1016/0022-0248(95)00831-4
DO - 10.1016/0022-0248(95)00831-4
M3 - Article
VL - 159
SP - 112
EP - 116
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -