Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE

S. K. Chang; C. D. Lee; S. I. Min; E. D. Sim; Y. S. Joh

doi:10.1016/0022-0248(95)00831-4

Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE

S. K. Chang, C. D. Lee, S. I. Min, E. D. Sim, Y. S. Joh

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

Original language	English
Pages (from-to)	112-116
Number of pages	5
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)00831-4
Publication status	Published - 1996 Feb

Bibliographical note

Funding Information:
This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00831-4

Cite this

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title = "Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE",

abstract = "The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.",

author = "Chang, {S. K.} and Lee, {C. D.} and Min, {S. I.} and Sim, {E. D.} and Joh, {Y. S.}",

note = "Funding Information: This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.",

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doi = "10.1016/0022-0248(95)00831-4",

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AU - Chang, S. K.

AU - Lee, C. D.

AU - Min, S. I.

AU - Sim, E. D.

AU - Joh, Y. S.

N1 - Funding Information: This work was supported in part by KOSEF through SPRC, 1995 and in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1995, Project No. 2424.

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N2 - The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

AB - The growth of ZnSe/ZnS single quantum well (SQW) structures was performed by atomic layer epitaxy (ALE) in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system. Through the photoluminescence measurement of ZnSe/ZnS SQWs, we observed clear shifts of the excitons to higher energies with decreasing well width, which demonstrate effects of strain and quantum confinement. Transition energies were calculated considering (i) a simple square well potential and (ii) a parabolic potential model under the action of strain effects. From comparison of the exciton energy with the calculated transition energies, we conclude that lattice relaxation induced interdiffusion occurs as the well width becomes thicker than the critical thickness.

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Influence of lattice relaxation on the properties of ZnSe/ZnS single quantum wells by MOVPE

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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