Influence of oxide thinning by selective etching process on solution processed indium zinc oxide thin film transistor

Jae Won Na, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.

Original languageEnglish
Pages (from-to)1165-1167
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume47
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1
Event54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States
Duration: 2016 May 222016 May 27

Fingerprint

Thin film transistors
Zinc oxide
Indium
Oxide films
Etching
Oxides
Acetic acid

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.",
author = "Na, {Jae Won} and Kim, {Hee Jun} and Lee, {Jin Hyeok} and Kim, {Hyun Jae}",
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Influence of oxide thinning by selective etching process on solution processed indium zinc oxide thin film transistor. / Na, Jae Won; Kim, Hee Jun; Lee, Jin Hyeok; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 47, No. 1, 01.01.2016, p. 1165-1167.

Research output: Contribution to journalConference article

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AU - Kim, Hee Jun

AU - Lee, Jin Hyeok

AU - Kim, Hyun Jae

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N2 - Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.

AB - Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.

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