Conductive indium zinc oxide (IZO) film was fabricated using solution process. After source/drain deposition on the IZO film, we immersed the IZO thin film transistor (TFT) into acetic acid solution to selectively etch the area between source and drain. By this selective etching, the IZO TFT showed proper transfer characteristics.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2016|
|Event||54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States|
Duration: 2016 May 22 → 2016 May 27
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).
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