We examined the influence of oxygen (O 2) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O 2 leakage inflow. We investigated the effect of increasing the O 2 flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O 2 content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO 2 core-shell structure.
Bibliographical noteFunding Information:
This research was supported by the Agency for Defense Development (ADD) .
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry