Influence of oxygen on the microstructural growth of SiC nanowires

Yoo Youl Choi, Jun Gyu Kim, Si Jung Park, Doo Jin Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We examined the influence of oxygen (O 2 ) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O 2 leakage inflow. We investigated the effect of increasing the O 2 flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O 2 content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO 2 core-shell structure.

Original languageEnglish
Pages (from-to)138-142
Number of pages5
JournalChemical Physics Letters
Volume531
DOIs
Publication statusPublished - 2012 Apr 2

Fingerprint

silicon carbides
Nanowires
nanowires
Oxygen
Growth temperature
oxygen
High resolution transmission electron microscopy
Chemical vapor deposition
leakage
flow velocity
Flow rate
vapor deposition
Vacuum
Crystalline materials
vacuum
transmission electron microscopy
high resolution
Temperature
temperature
silicon carbide

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Choi, Yoo Youl ; Kim, Jun Gyu ; Park, Si Jung ; Choi, Doo Jin. / Influence of oxygen on the microstructural growth of SiC nanowires. In: Chemical Physics Letters. 2012 ; Vol. 531. pp. 138-142.
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Influence of oxygen on the microstructural growth of SiC nanowires. / Choi, Yoo Youl; Kim, Jun Gyu; Park, Si Jung; Choi, Doo Jin.

In: Chemical Physics Letters, Vol. 531, 02.04.2012, p. 138-142.

Research output: Contribution to journalArticle

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