Influence of oxygen on the microstructural growth of SiC nanowires

Yoo Youl Choi; Jun Gyu Kim; Si Jung Park; Doo Jin Choi

doi:10.1016/j.cplett.2012.02.009

Influence of oxygen on the microstructural growth of SiC nanowires

Yoo Youl Choi, Jun Gyu Kim, Si Jung Park, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We examined the influence of oxygen (O ₂) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O ₂ leakage inflow. We investigated the effect of increasing the O ₂ flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O ₂ content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO ₂ core-shell structure.

Original language	English
Pages (from-to)	138-142
Number of pages	5
Journal	Chemical Physics Letters
Volume	531
DOIs	https://doi.org/10.1016/j.cplett.2012.02.009
Publication status	Published - 2012 Apr 2

Bibliographical note

Funding Information:
This research was supported by the Agency for Defense Development (ADD) .

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2012.02.009

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title = "Influence of oxygen on the microstructural growth of SiC nanowires",

abstract = "We examined the influence of oxygen (O 2) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O 2 leakage inflow. We investigated the effect of increasing the O 2 flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O 2 content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO 2 core-shell structure.",

author = "Choi, {Yoo Youl} and Kim, {Jun Gyu} and Park, {Si Jung} and Choi, {Doo Jin}",

note = "Funding Information: This research was supported by the Agency for Defense Development (ADD) . ",

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month = apr,

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doi = "10.1016/j.cplett.2012.02.009",

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T1 - Influence of oxygen on the microstructural growth of SiC nanowires

AU - Choi, Yoo Youl

AU - Kim, Jun Gyu

AU - Park, Si Jung

AU - Choi, Doo Jin

N1 - Funding Information: This research was supported by the Agency for Defense Development (ADD) .

PY - 2012/4/2

Y1 - 2012/4/2

N2 - We examined the influence of oxygen (O 2) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O 2 leakage inflow. We investigated the effect of increasing the O 2 flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O 2 content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO 2 core-shell structure.

AB - We examined the influence of oxygen (O 2) on the growth of silicon carbide nanowires (SiC NWs) by chemical vapor deposition (CVD), because vacuum environments are susceptible to O 2 leakage inflow. We investigated the effect of increasing the O 2 flow rate on the microstructural changes of SiC NWs and then evaluated the effect at various growth temperatures. The O 2 content was highly related to the density of NWs, which continued to increase actively at higher temperatures. High-resolution transmission electron microscopy (HR-TEM) revealed that NWs change from a single-crystalline phase to a polycrystalline phase and then to a SiC/SiO 2 core-shell structure.

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VL - 531

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EP - 142

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Influence of oxygen on the microstructural growth of SiC nanowires

Abstract

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