Influence of Pd doping on electrical and thermal properties of n-Type Cu0.008Bi2Te2.7Se0.3 alloys

Se Yun Kim, Hyun Sik Kim, Kyu Hyoung Lee, Hyun jun Cho, Sung sil Choo, Seok won Hong, Yeseong Oh, Yerim Yang, Kimoon Lee, Jae Hong Lim, Soon Mok Choi, Hee Jung Park, Weon Ho Shin, Sang il Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Doping is known as an effective way to modify both electrical and thermal transport properties of thermoelectric alloys to enhance their energy conversion efficiency. In this project, we report the effect of Pd doping on the electrical and thermal properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys. Pd doping was found to increase the electrical conductivity along with the electron carrier concentration. As a result, the effective mass and power factors also increased upon the Pd doping. While the bipolar thermal conductivity was reduced with the Pd doping due to the increased carrier concentration, the contribution of Pd to point defect phonon scattering on the lattice thermal conductivity was found to be very small. Consequently, Pd doping resulted in an enhanced thermoelectric figure of merit, zT, at a high temperature, due to the enhanced power factor and the reduced bipolar thermal conductivity.

Original languageEnglish
Article number4080
JournalMaterials
Volume12
Issue number24
DOIs
Publication statusPublished - 2019 Dec 1

Bibliographical note

Funding Information:
Funding: This research was funded by the 2018 Research Fund of the University of Seoul (20180511069).

Publisher Copyright:
© 2019 by the authors.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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